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IRS21867STRPBF
+БОМIC GATE DRVR HALF-BRIDGE 8SOIC
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRS21867STRPBF
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Лист данных IRS21867STRPBF DataSheet
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Пакет SOIC 8N
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В наличии4883
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 10V ~ 20V |
| LogicVoltage-VILVIH | 0.8V, 2.5V |
| Current-PeakOutput(SourceSink) | 4A, 4A |
| InputType | CMOS, TTL |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 22ns, 18ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Обзор
Description
Key features include a wide operating voltage range, high peak output current capability, and integrated dead-time protection to prevent shoot-through. It also features undervoltage lockout (UVLO) for both high-side and low-side drivers to ensure reliable operation. The IRS21867STRPBF is known for its ruggedness and reliability, making it suitable for harsh environments.
Its surface-mount package (SOIC-8) allows for compact designs, and it is commonly sought after for its ability to enhance system efficiency and performance. This driver is a part of the IR family of gate drivers, renowned for their high quality and consistent performance in power electronics.
Equivalent
Features
1. Operating Voltage: It supports a wide range of operating voltages, typically from 10V to 20V.
2. Gate Drive Capability: The device provides a strong gate drive with a source/sink current capability, enabling efficient switching of power transistors.
3. Under-Voltage Lockout (UVLO): Integrated UVLO protection for both the high-side and low-side to prevent malfunction during low supply voltage conditions.
4. Bootstrap Circuitry: Built-in bootstrap functionality facilitates the driving of high-side MOSFETs/IGBTs.
5. Dead-Time Control: Programmable dead-time to prevent shoot-through current, enhancing reliability.
6. Protection Features: Provides various protection features like over-current protection, over-temperature protection, and fault reporting.
7. Isolation: High-voltage level-shifting technology for high-side driver isolation, supporting voltages typically up to 600V.
8. Package: The device comes in a compact SOIC-8 package, making it suitable for space-constrained applications.
These features make the IRS21867STRPBF an ideal choice for applications in motor drives, power supplies, and inverters.
Pinout
Here’s a brief overview of its pin functions:
1. VCC: Supply voltage for the IC.
2. IN: Input for controlling the high-side and low-side outputs.
3. COM: Common ground reference for the IC.
4. LO: Low-side output for driving the low-side MOSFET or IGBT.
5. VS: High-side floating supply return.
6. HO: High-side output for driving the high-side MOSFET or IGBT.
7. VB: High-side floating supply voltage.
8. NC: No connection, typically not used.
This driver IC is used in various applications, including motor drives, power supplies, and inverters, for efficient switching and isolation between the gate signals and power stages.