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IS42S16800E-7TL
+БОМIC DRAM 128MBIT PAR 54TSOP II
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ПроизводительISSI, Интегрированное кремниевое решение Inc.
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Мфр. Часть #IS42S16800E-7TL
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Лист данных IS42S16800E-7TL DataSheet
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В наличии6069
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Obsolete |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 128Mbit |
| Memory Organization | 8M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 143 MHz |
| Access Time | 5.4 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 54-TSOP II |
| Base Product Number | IS42S16800 |
Обзор
Description
Key specifications include a 7ns access time, which enhances the processing speed for data-intensive tasks, and a 16-bit data I/O interface, facilitating efficient data transfers. This DRAM chip supports a synchronous interface, which allows for faster read and write operations compared to asynchronous DRAM types.
The IS42S16800E-7TL is designed for easy integration into systems, with a compact 54-pin TSOP II package. Its reliability and performance make it ideal for use in devices like routers, printers, and other embedded systems. Overall, it serves as a robust solution for applications requiring reliable memory performance and efficiency.
Equivalent
1. MT47H128M8 (Micron)
2. K4T1G164EB (Samsung)
3. Hynix H5TQ1G83AFR (SK Hynix)
4. NT5CB256M16DP (Nanya)
These chips have similar specifications, such as capacity, speed, and package type, but always verify compatibility with your specific application.
Features
1. Density: 1Gb (128MB) organized as 8 banks of 16M x 8 bits.
2. Data Rate: Operates at a speed of 7.5ns, supporting DDR400 (PC3200) performance, which allows for data transfer rates up to 400 MT/s.
3. Voltage: Operates at a supply voltage of 2.5V.
4. Package: Available in a 54-pin TSOP II package.
5. Burst Length: Supports burst lengths of 2, 4, and 8 for efficient data transfer.
6. Latency: Offers low latency, enhancing overall performance in applications.
7. Temperature Range: Suitable for commercial-grade applications with an operating temperature of 0°C to 70°C.
This memory is typically used in various computing applications, including desktop systems, servers, and networking devices.
Pinout
Function Overview:
- Data Bus: 8 bits (DQ pins) for data input/output.
- Address Bus: Address pins (A0-A11) for selecting memory locations.
- Control Signals:
- CS (Chip Select): Enables the chip.
- RAS (Row Address Strobe): Activates row access.
- CAS (Column Address Strobe): Activates column access.
- WE (Write Enable): Allows write operations.
- OE (Output Enable): Allows data output during read operations.
- Clock Input: CLK pin for synchronizing data operations.
- Power Supply Pins: VDD and VSS for power and ground connections.
This device is used in various applications where synchronous operation and high-speed memory access are required.