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IS46DR16640C-25DBLA2-TR
+БОМIC DRAM 1GBIT PARALLEL 84TWBGA
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ПроизводительISSI, Интегрированное кремниевое решение Inc.
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Мфр. Часть #IS46DR16640C-25DBLA2-TR
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В наличии3866
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| PartStatus | Active |
| DigiKeyProgrammable | Not Verified |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM - DDR2 |
| MemorySize | 1Gbit |
| MemoryOrganization | 64M x 16 |
| MemoryInterface | Parallel |
| ClockFrequency | 400 MHz |
| WriteCycleTime-Word,Page | 15ns |
| AccessTime | 400 ps |
| Voltage-Supply | 1.7V ~ 1.9V |
| OperatingTemperature | -40°C ~ 105°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 84-TFBGA |
| SupplierDevicePackage | 84-TWBGA (8x12.5) |
| BaseProductNumber | IS46DR16640 |
Обзор
Description
The "C" in the part number signifies the component's commercial temperature range, while “-25” indicates a -25°C to 85°C operational temperature. The “A2” denotes the revision of the silicon. The “-TR” suffix indicates that the product is provided in tape and reel packaging for automated assembly.
This memory chip is ideal for various applications including smartphones, tablets, and embedded systems, where performance and efficiency are critical.
Equivalent
1. Micron MT41J1G8XB-15E
2. Hynix H5TQ1G83MFR-10C
3. Samsung K4B4G1646D-BCK0
Ensure to check specific datasheets for pin compatibility, voltage, and performance characteristics.
Features
1. Density: 1 Gb (128MB x 8).
2. Data Rate: Operates at 800 MT/s (megatransfers per second).
3. Speed Grade: Specified at 25 ns (nanoseconds).
4. Interface: 8-bit wide data bus.
5. Operating Voltage: 1.5V (standard DDR3 voltage).
6. Packaging: Available in a small, compact 78-ball TFBGA (Thin Fine Ball Grid Array).
7. Temperature Range: Supports commercial temperature range (0°C to 70°C).
8. Features: Includes features such as burst lengths of 4 or 8 and an on-die termination (ODT) for improved signal integrity.
This memory is suitable for various applications, including consumer electronics, networking, and industrial devices, providing high-speed data access and efficiency.
Pinout
The key functions of its pins include:
- Data I/O Pins: For data transfer.
- Address Pins: For row and column address selection.
- Control Pins: Such as Chip Select (CS), Write Enable (WE), and Read Enable (RE) for controlling read and write operations.
- Clock Pins: To synchronize data transfer.
- Power and Ground Pins: To provide necessary voltage and ground connections.
This device operates at a clock frequency of 400 MHz and supports a data transfer rate of up to 1600 MT/s. It is typically used in applications requiring high-speed memory, such as mobile devices and computing systems.