ISO5852SDWR

Изображения являются только для ссылки

ISO5852SDWR

+БОМ

DGTL ISO 5.7KV 1CH GT DVR 16SOIC

  • ПроизводительТехасские инструменты

  • Мфр. Часть #ISO5852SDWR

  • Лист данных ISO5852SDWR DataSheet

  • В наличии11837

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Part Status Active
Technology Capacitive Coupling
Number of Channels 1
Voltage - Isolation 5700Vrms
Common Mode Transient Immunity (Min) 100kV/µs
Propagation Delay tpLH / tpHL (Max) 110ns, 110ns
Rise / Fall Time (Typ) 18ns, 20ns
Current - Output High, Low 1.5A, 3.4A
Current - Peak Output 2.7A, 5.5A
Voltage - Output Supply 15V ~ 30V
Operating Temperature -40°C ~ 125°C
Mounting Type Surface Mount
Package / Case 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package 16-SOIC
Approval Agency CQC, CSA, UR, VDE
Base Product Number ISO5852

Обзор

Description

"ISO5852SDWR" doesn't correspond to any recognized standard or widely known term as of my latest update. It's possible that it might refer to a specific proprietary technology, a newly released standard, or a niche subject that hasn't been broadly documented yet. If ISO5852SDWR is a new or specialized term, I recommend checking the latest ISO standards directly or contacting the organization or company associated with this term for detailed information. For industry-specific or recent developments, consulting technical publications, industry news, or professional networks might also provide more insights.

Equivalent

The ISO5852SDWR is a Texas Instruments device that is a high-speed, reinforced isolated gate driver. Equivalent products from other manufacturers include:
1. Infineon's 1ED020I12-F2: A single-channel isolated IGBT driver.
2. Analog Devices ADuM4135: Isolated gate driver suitable for IGBTs and SiC MOSFETs.
3. Broadcom's ACPL-P343/W343: High-speed, isolated gate driver for IGBT and MOSFET.
Ensure compatibility with your specific application requirements when selecting an alternative.

Features

ISO5852SDWR is a robust, dual-channel isolated gate driver primarily used for driving SiC (Silicon Carbide) and IGBT (Insulated Gate Bipolar Transistor) power devices. It features two independent, isolated output channels that provide up to 5A peak sourcing and 5A peak sinking current capabilities, ensuring efficient switching. The device provides reinforced isolation up to 5 kV RMS, essential for high-voltage applications, enhancing safety and reliability.
Key features include fast propagation delay and high common-mode transient immunity (CMTI), which are critical for minimizing delay and ensuring reliable performance in noisy environments. The driver incorporates protection features like undervoltage lockout (UVLO) and overcurrent protection, which safeguard against incorrect operation and potential damage.
ISO5852SDWR also supports Miller clamp functionality, preventing parasitic turn-on issues. Its wide supply voltage range and temperature range make it versatile for various industrial applications. Designed to optimize performance and reliability, it is suitable for use in renewable energy systems, motor drives, and power supply applications.

Pinout

The ISO5852SDWR is a 16-pin device primarily used as an isolated gate driver for IGBTs and MOSFETs in industrial applications. Its main function is to provide isolation and drive high-side and low-side power transistors with high efficiency and reliability.
Here is a concise summary of its pin functions:
1. VCC1 (Pin 1): Supply voltage for the input side.
2. GND1 (Pin 2): Ground for the input side.
3. IN+ (Pin 3): Non-inverting input signal.
4. IN- (Pin 4): Inverting input signal.
5. EN (Pin 5): Enable pin; controls the output.
6. nFAULT (Pin 6): Fault output; indicates any fault conditions.
7. RDY (Pin 7): Ready pin; signals when the device is ready for operation.
8. VCC2 (Pin 8): Supply voltage for the output side.
9. GND2 (Pins 9 & 10): Ground for the output side.
10. OUT (Pin 11): Gate drive output.
11. VEE2 (Pin 12): Negative supply voltage for the output stage.
12. NC (Pins 13 & 14): Not connected.
13. CT (Pin 15): Connected to an external capacitor to set the soft shutdown time.
14. DESAT (Pin 16): Desaturation detection; used for monitoring the IGBT/MOSFET saturation voltage.
This setup allows for robust control and efficient operation of power devices.

Manufacturer

The ISO5852SDWR is manufactured by Texas Instruments (TI). Texas Instruments is a global semiconductor company that designs and manufactures a wide range of electronic components, including analog and embedded processing chips. TI is known for producing integrated circuits and semiconductors that are used in various applications, such as automotive, industrial, personal electronics, communications, and enterprise systems. The company focuses on innovation and development in electronics technology to enable advancements in a variety of sectors.

Application

The ISO5852SDWR is a high-performance isolated gate driver designed for driving IGBTs and SiC MOSFETs, primarily used in industrial and automotive applications. Its key application areas include:
1. Industrial Motor Drives: Enhances efficiency and reliability in controlling motor speeds and torque.
2. Solar Inverters: Improves energy conversion efficiency and system reliability.
3. EV/HEV Powertrains: Facilitates efficient power management in electric and hybrid vehicles.
4. Uninterruptible Power Supplies (UPS): Ensures stable power delivery during outages.
5. Welding Equipment: Offers precise control over power delivery for welding processes.
These applications benefit from the driver's high noise immunity, efficiency, and safety features.

Package

The ISO5852SDWR is a part number for a high-performance isolated gate driver from Texas Instruments. It comes in a SOIC (Small Outline Integrated Circuit) package, specifically a 16-pin wide-body SOIC.

Продукты, связанные с ISO5852SDWR