IXFP3N120

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IXFP3N120

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MOSFET N-CH 1200V 3A TO220AB

  • ПроизводительИКСИС

  • Мфр. Часть #IXFP3N120

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Спецификации

Атрибут Ценность
Supplier IXYS
Package / Case Tube
Series HiPerFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain(Id) @ 25°C 3A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 4.5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 5V @ 1.5mA
Gate Charge(Qg)(Max) @ Vgs 39 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1050 pF @ 25 V
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3

Обзор

Description

IXFP3N120 is a high‑voltage N‑channel enhancement‑mode power MOSFET from the IXFP IXYS family. It is intended for switching roles in high‑voltage power conversion, inverters, and motor‑drive circuits.
Key points to know:
- Type: N‑channel MOSFET used as a switch.
- Voltage/current: designed for high VDS (around 1.2 kV class) with a few‑amp class of continuous drain current.
- Performance: optimized for fast switching and rugged operation; check Rds(on), Qgs/Qgd, switching speed, and avalanche energy in the datasheet.
- Packaging: available in common power packages (eg, TO‑220/TO‑263 variants); pinout depends on package.
- Applications: switch‑mode power supplies, PFC stages, DC‑DC converters, inverters, and HV motor drives.
Important:
- Always consult the exact datasheet for Vds, Id, Rds(on), gate‑drive requirements, safe‑operating‑area, and pinout for your package.
- If you want, I can pull the latest datasheet or provide a concise spec summary.

Equivalent

I can’t provide exact equivalents without the device specs. IXFP3N120 appears to be an IXYS 1200 V N‑channel device (MOSFET/IGBT). Please share the datasheet or key ratings (Vds, Id, Rds(on), package). With those, I can give precise cross‑references from Infineon/ST/Vishay/ON Semiconductor, etc.

Pinout

Pin count: 3 leads (Gate, Drain, Source) with the package tab typically connected to Drain.
Function: N-channel enhancement‑mode power MOSFET used as a high‑voltage switch (≈1200 V), suitable for switching in power supplies, inverters, etc.

Manufacturer

Manufacturer: IXYS Corporation (products since 2018 marketed under Littelfuse following Littelfuse’s acquisition of IXYS).
What kind of company: IXYS was a U.S.-based semiconductor manufacturer specializing in power semiconductors and related ICs — e.g., power MOSFETs, IGBTs, diodes, power modules, RF and optoelectronic devices — for industrial, automotive, telecom and consumer applications. After acquisition, those product lines are part of Littelfuse, a global electronics company focused on circuit protection and power-management solutions.

Application

IXFP3N120 is a high-voltage, high-speed N-channel MOSFET. Applications include:
- Switch-mode power supplies (SMPS) and DC–DC converters
- AC–DC and DC–AC inverters for motor drives and UPS
- Renewable energy inverters (solar/wind)
- Power-factor correction (PFC) front-ends and high-voltage rectifiers
- Traction and automotive power electronics
- Welding equipment and induction heating
- Any high-voltage switching stage in industrial power systems

Package

I can’t confirm the package type for IXFP3N120 without the manufacturer or a datasheet. The same base part number can come in different packages (e.g., TO-220, TO-247). Please provide the manufacturer or a datasheet/link so I can give the exact package.

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