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IXFP80N25X3
+БОМMOSFET N-CH 250V 80A TO220AB
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ПроизводительИКСИС
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Мфр. Часть #IXFP80N25X3
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Лист данных IXFP80N25X3 DataSheet
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В наличии2801
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Спецификации
| Атрибут | Ценность |
| Series | HiPerFET™, Ultra X3 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5430 pF @ 25 V |
| Power Dissipation (Max) | 390W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Base Product Number | IXFP80 |
Обзор
Description
With a robust switching capability, the IXFP80N25X3 is often used in applications such as power supplies, motor drives, and DC-DC converters. It is housed in a TO-220 package, facilitating easy heat dissipation and allowing for efficient thermal management.
Additionally, the IXFP80N25X3 exhibits fast switching speeds, making it ideal for high-frequency applications. Its gate threshold voltage (V_GS(th)) is designed for easy driving, ensuring compatibility with various control circuits. Overall, this MOSFET combines high performance, reliability, and efficiency, making it a favored choice in modern power electronics.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 250V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) up to 80A, allowing it to drive heavy loads efficiently.
3. Low R_DS(on): The device boasts a low on-resistance (R_DS(on)), typically around 0.05 ohms, which reduces conduction losses and improves efficiency.
4. Fast Switching: The IXFP80N25X3 supports fast switching speeds, ideal for applications in switch-mode power supplies and inverters.
5. Thermal Performance: It has a robust thermal design, with a maximum junction temperature of 150°C, ensuring reliability under high thermal stress.
6. TO-220 Package: Encased in a TO-220 package, it offers good thermal dissipation and ease of mounting.
These features make the IXFP80N25X3 suitable for automotive, industrial, and consumer electronics applications.
Pinout
1. Gate (G) - Controls the MOSFET's switching action.
2. Drain (D) - The output terminal through which the load current flows.
3. Source (S) - The terminal connected to the ground or power source.
The specific pinout may vary slightly depending on the package type, so it's essential to refer to the manufacturer’s datasheet for detailed information. This device is known for its low on-resistance and high-speed switching capabilities, making it suitable for high-power applications.
Manufacturer
IXYS is known for its innovation in the field of power electronics and offers products that cater to industries like automotive, industrial automation, telecommunications, and consumer electronics. Their expertise in semiconductor technology enables them to develop components that enhance efficiency and performance in electronic circuits.
In summary, IXYS Corporation is a key player in the semiconductor industry, particularly in power electronics, and is recognized for its commitment to quality and technological advancement.
Application
1. Switching Power Supplies: Used in DC-DC converters and inverters for efficient power conversion.
2. Motor Control: Employed in drive circuits for electric motors in industrial and automotive applications.
3. Power Management: Utilized in load switch applications for energy-efficient power distribution.
4. LED Drivers: Used in circuits for managing LED lighting systems.
5. Telecommunications: Applications in power amplifiers and RF circuits.
Its high voltage and current ratings make it suitable for a variety of demanding electronic applications.