Изображения являются только для ссылки
IXFX44N80P
+БОМMOSFET N-CH 800V 44A PLUS247-3
-
ПроизводительИКСИС
-
Мфр. Часть #IXFX44N80P
-
В наличии290
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | IXYS |
| Package / Case | Tube |
| Series | HiPerFET™, Polar |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain(Id) @ 25°C | 44A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 190mOhm @ 22A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 8mA |
| Gate Charge(Qg)(Max) @ Vgs | 198 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 12000 pF @ 25 V |
| Power Dissipation (Max) | 1040W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PLUS247™-3 |
Обзор
Description
IXFX44N80P is a high-voltage N-channel enhancement-mode MOSFET from IXYS (IXFX family). It’s meant as a switching device in HV power electronics, such as switch-mode power supplies, inverters, and motor drives. The device typically blocks around 800 V and conducts tens of amperes when on; gate drive is usually in the 10–12 V range. It’s designed for fast switching and ruggedness against inductive loads (avalanche energy handling). It’s offered in common power-pack options (through-hole and surface-mount, depending on the variant). For exact values (VDS, ID, RDS(on), Qg, switching times, thermal data, and packaging), refer to the latest IXYS/Microchip datasheet.
Pinout
Pin count: 3 leads (plus a drain tab).
Typical pinout (front view, left-to-right): Pin 1 Gate, Pin 2 Drain, Pin 3 Source. The metal tab is also Drain.
Function: N-channel enhancement-mode power MOSFET used as a high‑voltage switching element; conducts from Drain to Source when Gate-to-Source voltage is above threshold. Note: verify exact package variant (TO‑220/D²PAK, etc.) as pin spacing can vary slightly.
Typical pinout (front view, left-to-right): Pin 1 Gate, Pin 2 Drain, Pin 3 Source. The metal tab is also Drain.
Function: N-channel enhancement-mode power MOSFET used as a high‑voltage switching element; conducts from Drain to Source when Gate-to-Source voltage is above threshold. Note: verify exact package variant (TO‑220/D²PAK, etc.) as pin spacing can vary slightly.
Manufacturer
- Manufacturer: IXYS Corporation (now part of Littelfuse).
- What kind of company: A semiconductor company that designs and manufactures power semiconductors (MOSFETs, IGBTs, diodes) and related devices for industrial and consumer electronics.
- What kind of company: A semiconductor company that designs and manufactures power semiconductors (MOSFETs, IGBTs, diodes) and related devices for industrial and consumer electronics.
Application
IXFX44N80P is a high-voltage, high-current N-channel MOSFET. Typical application areas include:
- Offline switch-mode power supplies and power-factor correction
- Solar inverters and grid-tied converters
- Uninterruptible power supplies (UPS) and energy-storage inverters
- AC motor drives and servo drives (inverter-based control)
- Industrial DC-DC converters and choppers
- Induction heating and welding equipment (high-speed switching)
Note: use in high-voltage, high-current switching applications with appropriate gate drive and protection.
- Offline switch-mode power supplies and power-factor correction
- Solar inverters and grid-tied converters
- Uninterruptible power supplies (UPS) and energy-storage inverters
- AC motor drives and servo drives (inverter-based control)
- Industrial DC-DC converters and choppers
- Induction heating and welding equipment (high-speed switching)
Note: use in high-voltage, high-current switching applications with appropriate gate drive and protection.
Package
TO-220 plastic through-hole package (TO-220AB). Confirm exact variant in the datasheet, as some listings may use D2PAK or other options.
