Спецификации
| Атрибут | Ценность |
| Package / Case | Tube |
| Series | HiPerFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 3A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 4.5Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 42 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1350 pF @ 25 V |
| Power Dissipation (Max) | 200W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
Обзор
Description
The IXTP3N120 is a high-voltage N-channel power MOSFET designed for efficient switching applications. Key features include:
- Voltage Rating: 1200V
- Current Rating: 3A (continuous)
- Low On-Resistance (RDS(on)): Reduces conduction losses
- Fast Switching: Optimized for high-frequency operations
- TO-247 Package: Ensures robust thermal performance
Commonly used in power supplies, inverters, and motor control, it offers reliability in high-voltage environments. Its low gate charge enhances efficiency, making it suitable for energy-conscious designs.
For detailed specs, refer to the datasheet.
- Voltage Rating: 1200V
- Current Rating: 3A (continuous)
- Low On-Resistance (RDS(on)): Reduces conduction losses
- Fast Switching: Optimized for high-frequency operations
- TO-247 Package: Ensures robust thermal performance
Commonly used in power supplies, inverters, and motor control, it offers reliability in high-voltage environments. Its low gate charge enhances efficiency, making it suitable for energy-conscious designs.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the IXTP3N120 (1200V, 3A N-channel MOSFET) include:
- STP3N120 (STMicroelectronics)
- IRFBC40 (Infineon)
- FQP3N120 (ON Semiconductor)
- 2SK3878 (Toshiba)
These alternatives offer similar voltage/current ratings and can be used in high-voltage switching applications. Always verify datasheet specifications for exact compatibility.
- STP3N120 (STMicroelectronics)
- IRFBC40 (Infineon)
- FQP3N120 (ON Semiconductor)
- 2SK3878 (Toshiba)
These alternatives offer similar voltage/current ratings and can be used in high-voltage switching applications. Always verify datasheet specifications for exact compatibility.
Features
The IXTP3N120 is a 1200V, 3A N-channel MOSFET with the following key features:
- High Voltage Rating: 1200V drain-source voltage (VDSS).
- Low On-Resistance (RDS(on)): Typically 4.5Ω (max) for reduced conduction losses.
- Fast Switching: Optimized for high-speed applications.
- Low Gate Charge (Qg): Enhances efficiency in switching circuits.
- Avalanche Energy Rated: Robust against inductive load spikes.
- TO-220 Package: Standard through-hole mounting for easy heat dissipation.
Ideal for high-voltage power supplies, inverters, and motor control applications.
- High Voltage Rating: 1200V drain-source voltage (VDSS).
- Low On-Resistance (RDS(on)): Typically 4.5Ω (max) for reduced conduction losses.
- Fast Switching: Optimized for high-speed applications.
- Low Gate Charge (Qg): Enhances efficiency in switching circuits.
- Avalanche Energy Rated: Robust against inductive load spikes.
- TO-220 Package: Standard through-hole mounting for easy heat dissipation.
Ideal for high-voltage power supplies, inverters, and motor control applications.
Pinout
The IXTP3N120 is a 3-pin N-channel power MOSFET designed for high-voltage applications.
Pin Functions:
1. Gate (G): Controls the switching operation.
2. Drain (D): High-voltage terminal, connected to the load.
3. Source (S): Common ground/reference terminal.
Key Features:
- 1200V drain-source voltage rating.
- 3A continuous drain current.
- Used in switching power supplies, inverters, and motor drives.
The package is typically TO-220 (3-pin), making it suitable for heat dissipation.
Pin Functions:
1. Gate (G): Controls the switching operation.
2. Drain (D): High-voltage terminal, connected to the load.
3. Source (S): Common ground/reference terminal.
Key Features:
- 1200V drain-source voltage rating.
- 3A continuous drain current.
- Used in switching power supplies, inverters, and motor drives.
The package is typically TO-220 (3-pin), making it suitable for heat dissipation.
Application
The IXTP3N120 is a high-voltage N-channel MOSFET designed for applications requiring efficient power handling and fast switching. Key application areas include:
- Switched-Mode Power Supplies (SMPS) – Used in AC-DC and DC-DC converters.
- Motor Control – Drives and inverters for industrial and automotive systems.
- Inductive Heating – High-frequency resonant converters.
- Renewable Energy – Solar inverters and wind power systems.
- Electronic Ballasts – Lighting control circuits.
Its 1200V breakdown voltage and low on-resistance make it suitable for high-power, high-efficiency designs.
- Switched-Mode Power Supplies (SMPS) – Used in AC-DC and DC-DC converters.
- Motor Control – Drives and inverters for industrial and automotive systems.
- Inductive Heating – High-frequency resonant converters.
- Renewable Energy – Solar inverters and wind power systems.
- Electronic Ballasts – Lighting control circuits.
Its 1200V breakdown voltage and low on-resistance make it suitable for high-power, high-efficiency designs.
Package
The IXTP3N120 is a high-voltage N-channel MOSFET typically available in a TO-247 package. This package type is designed for high-power applications, offering robust thermal performance and mechanical durability. The TO-247 is a through-hole package with three leads, suitable for efficient heat dissipation, making it ideal for demanding circuits like power supplies and motor drives.
