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IXTQ82N25P
+БОМMOSFET N-CH 250V 82A TO3P
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ПроизводительИКСИС
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Мфр. Часть #IXTQ82N25P
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В наличии14869
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | IXYS |
| Package / Case | Tube |
| Series | Polar |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain(Id) @ 25°C | 82A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 35mOhm @ 41A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 142 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4800 pF @ 25 V |
| Power Dissipation (Max) | 500W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P |
Обзор
Description
IXTQ82N25P is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used for switching and amplifying electronic signals in various applications. Manufactured by IXYS, this MOSFET is designed for high-efficiency and high-speed switching. It features an N-channel configuration, meaning it conducts when a positive voltage is applied to the gate relative to the source.
Key specifications of the IXTQ82N25P include a voltage rating of approximately 250V, a continuous current rating of 82A, and a low on-resistance, which reduces power loss and improves efficiency. These characteristics make it suitable for use in power supplies, motor drives, inverters, and other applications that require robust, efficient switching and low power dissipation.
Additionally, the IXTQ82N25P is often favored for its reliability and thermal performance, allowing it to operate effectively in demanding environments. Its design and parameters are optimized for minimizing switching losses and handling high currents, making it a versatile component in modern electronic systems.
Key specifications of the IXTQ82N25P include a voltage rating of approximately 250V, a continuous current rating of 82A, and a low on-resistance, which reduces power loss and improves efficiency. These characteristics make it suitable for use in power supplies, motor drives, inverters, and other applications that require robust, efficient switching and low power dissipation.
Additionally, the IXTQ82N25P is often favored for its reliability and thermal performance, allowing it to operate effectively in demanding environments. Its design and parameters are optimized for minimizing switching losses and handling high currents, making it a versatile component in modern electronic systems.
Equivalent
The IXTQ82N25P is a N-channel MOSFET. Equivalent products can include similar N-channel MOSFETs with comparable voltage and current ratings. Some potential equivalents are:
1. IRFP250N
2. STP80NF70
3. IXFH82N25P (from the same manufacturer with slight variations)
4. FQA80N25
When selecting a replacement, ensure that the electrical characteristics like V_ds, I_d, R_ds(on), and package type match the requirements of your specific application. Always consult datasheets for confirmation.
1. IRFP250N
2. STP80NF70
3. IXFH82N25P (from the same manufacturer with slight variations)
4. FQA80N25
When selecting a replacement, ensure that the electrical characteristics like V_ds, I_d, R_ds(on), and package type match the requirements of your specific application. Always consult datasheets for confirmation.
Features
The IXTQ82N25P is a power MOSFET designed for various applications requiring high efficiency and fast switching. Here are some key features:
1. Voltage and Current Ratings: It typically has a drain-source voltage (V_ds) rating of 250V and a continuous drain current (I_d) capacity, often around 82A.
2. Low On-Resistance: It features a low on-state resistance (R_ds(on)), which reduces conduction losses, improving efficiency.
3. Fast Switching: The device is designed for rapid switching, which reduces energy loss during transitions, making it suitable for high-frequency applications.
4. Thermal Performance: The MOSFET is often housed in a package that provides good thermal performance, allowing for efficient heat dissipation.
5. Ruggedness: It is built to handle high power and offers robustness against avalanche and dv/dt stress.
6. Applications: Commonly used in power supplies, motor controllers, and other power management systems.
These features make the IXTQ82N25P a versatile component in the design of efficient and reliable electronic systems. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
1. Voltage and Current Ratings: It typically has a drain-source voltage (V_ds) rating of 250V and a continuous drain current (I_d) capacity, often around 82A.
2. Low On-Resistance: It features a low on-state resistance (R_ds(on)), which reduces conduction losses, improving efficiency.
3. Fast Switching: The device is designed for rapid switching, which reduces energy loss during transitions, making it suitable for high-frequency applications.
4. Thermal Performance: The MOSFET is often housed in a package that provides good thermal performance, allowing for efficient heat dissipation.
5. Ruggedness: It is built to handle high power and offers robustness against avalanche and dv/dt stress.
6. Applications: Commonly used in power supplies, motor controllers, and other power management systems.
These features make the IXTQ82N25P a versatile component in the design of efficient and reliable electronic systems. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Pinout
The IXTQ82N25P is a N-channel MOSFET produced by IXYS Corporation. It typically features a TO-3P package, which commonly has three pins. These pins are:
1. Gate (G): This pin is used to control the MOSFET. When a voltage is applied to the gate, it allows current to flow between the drain and source.
2. Drain (D): This is where the current flows out of the MOSFET when it is in the conducting state.
3. Source (S): This is where the current enters the MOSFET.
The IXTQ82N25P is designed for high-power applications, offering a high current capacity and low on-resistance. It's used in switching and amplification applications due to its efficiency and reliability in handling large currents.
1. Gate (G): This pin is used to control the MOSFET. When a voltage is applied to the gate, it allows current to flow between the drain and source.
2. Drain (D): This is where the current flows out of the MOSFET when it is in the conducting state.
3. Source (S): This is where the current enters the MOSFET.
The IXTQ82N25P is designed for high-power applications, offering a high current capacity and low on-resistance. It's used in switching and amplification applications due to its efficiency and reliability in handling large currents.
Manufacturer
The IXTQ82N25P is manufactured by IXYS Corporation. IXYS is a semiconductor company that specializes in the development and production of power semiconductors, mixed-signal integrated circuits (ICs), and RF (radio frequency) applications. Founded in 1983, IXYS has been known for its innovation in power management and efficiency, catering to a wide range of industries including industrial, telecommunications, medical, and consumer electronics.
In 2018, IXYS was acquired by Littelfuse, Inc., a global manufacturer of electronic components and circuit protection products. Littelfuse is a larger company with a diverse portfolio that extends beyond semiconductors to include sensors, automotive electronics, and industrial solutions. The acquisition enabled Littelfuse to enhance its capabilities in power semiconductor technologies and broaden its reach into new markets.
In 2018, IXYS was acquired by Littelfuse, Inc., a global manufacturer of electronic components and circuit protection products. Littelfuse is a larger company with a diverse portfolio that extends beyond semiconductors to include sensors, automotive electronics, and industrial solutions. The acquisition enabled Littelfuse to enhance its capabilities in power semiconductor technologies and broaden its reach into new markets.
Application
The IXTQ82N25P is a power MOSFET, which is commonly used in various applications requiring efficient power switching. Its key application areas include:
1. Power Supply Units: Used in switched-mode power supplies (SMPS) for efficient energy conversion.
2. Motor Control: Employed in motor drivers and control circuits for industrial and automotive applications.
3. Inverters: Utilized in DC-AC inverters for renewable energy systems like solar inverters.
4. Audio Amplifiers: Functions in Class D amplifiers for high-efficiency audio systems.
5. Battery Management: Integrated into battery charging and protection circuits.
6. Lighting Systems: Used in LED drivers and lighting controls for efficient power management.
These applications benefit from the MOSFET's high-speed switching and low on-state resistance.
1. Power Supply Units: Used in switched-mode power supplies (SMPS) for efficient energy conversion.
2. Motor Control: Employed in motor drivers and control circuits for industrial and automotive applications.
3. Inverters: Utilized in DC-AC inverters for renewable energy systems like solar inverters.
4. Audio Amplifiers: Functions in Class D amplifiers for high-efficiency audio systems.
5. Battery Management: Integrated into battery charging and protection circuits.
6. Lighting Systems: Used in LED drivers and lighting controls for efficient power management.
These applications benefit from the MOSFET's high-speed switching and low on-state resistance.
Package
The IXTQ82N25P is a power MOSFET, and it comes in a TO-247 package type. The TO-247 is a through-hole package often used for high-power semiconductors and provides good thermal performance.
