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LMBR130T1G
+БОМ-
ПроизводительЛРК
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Мфр. Часть #LMBR130T1G
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В наличии5900
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Manufacturer | LRC |
| Package | SOD-123 |
| Voltage - DC Reverse(Vr) | 30V |
| Current - Rectified | 1A |
| Voltage - Forward(Vf@If) | 350mV |
| Reverse Leakage Current (Ir) | 10uA |
Обзор
Description
The LMBR130T1G offers adjustable output voltage, allowing flexibility in design. It includes built-in protection features such as thermal shutdown and overcurrent protection, enhancing reliability. The device is packaged in a compact form, facilitating integration into space-constrained circuits.
Overall, the LMBR130T1G is an efficient choice for designers seeking a reliable LDO with performance characteristics suited for various electronic applications, including consumer electronics, communication devices, and automotive systems.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 6A.
3. On-Resistance: Low R_DS(on) value, typically around 60 mΩ, for enhanced power efficiency and minimal heat generation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is between 1V to 2.5V, enabling operation with low gate drive voltages.
5. Fast Switching: Designed for quick turn-on and turn-off times, suitable for high-frequency applications.
6. Package Type: Available in the SOT-23 package, facilitating compact designs.
7. Applications: Commonly used in power management, DC-DC converters, and motor control circuits.
These features make the LMBR130T1G a versatile choice for modern electronic designs requiring efficient power handling.
Pinout
1. Anode (A): This is the positive terminal where the current enters the diode.
2. Cathode (K): This is the negative terminal where the current exits the diode.
The device is known for its low forward voltage drop and fast switching speed, making it suitable for use in power supplies, converters, and other circuits requiring efficient rectification. It typically has a maximum repetitive reverse voltage (V_RRM) of 30V and a forward current (I_F) rating of 1A.
Manufacturer
Founded in 1999, ON Semiconductor has grown through a series of acquisitions and innovations, positioning itself as a key player in the semiconductor market. Its focus on energy-efficient technologies aligns with the growing demand for sustainable solutions in electronics. The company is headquartered in Phoenix, Arizona, and operates globally, catering to diverse customer needs across various applications.
With a commitment to innovation, quality, and reliability, ON Semiconductor continues to advance in the semiconductor industry, providing essential components that enable the functionality of modern electronic devices.