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M29F400FB55M3F2
+БОМIC FLASH 4MBIT 44SO
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ПроизводительКомпания Alliance Memory, Inc.
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Мфр. Часть #M29F400FB55M3F2
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В наличии2861
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q100 |
| ProductStatus | Active |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NOR |
| MemorySize | 4Mb (512K x 8, 256K x 16) |
| WriteCycleTime-WordPage | 55ns |
| AccessTime | 55 ns |
| Voltage-Supply | 4.5V ~ 5.5V |
| OperatingTemperature | -40°C ~ 125°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 44-SOIC (0.496, 12.60mm Width) |
Обзор
Description
Key features of the M29F400FB55M3F2 include:
1. Memory Size: It typically offers 4 Megabits (512 Kilobytes) of storage capacity.
2. Architecture: The device uses NOR Flash architecture, which is ideal for applications that require execute-in-place (XIP) capabilities, allowing code to run directly from the Flash.
3. Interface: It operates on a parallel interface, which facilitates quick data access and programming.
4. Performance: Offers fast read and write speeds, making it suitable for applications requiring rapid data processing.
5. Endurance and Reliability: It boasts high endurance with a significant number of program/erase cycles and features robust data retention capabilities.
This Flash memory device is typically used in consumer electronics, automotive systems, and industrial applications where reliable data storage and quick access to firmware or application code are necessary.
Equivalent
1. Micron: MT28F400B5
2. Cypress: CY29F400
3. Winbond: W29C040
It's important to verify compatibility regarding voltage, package type, and speed based on your specific application requirements.
Features
1. Architecture: Organized in 8 uniform sectors, allowing for flexible data storage and management.
2. Interface: It operates with a single 5V power supply for read, erase, and programming operations.
3. Access Time: Offers fast random access times, with a typical read access time of 55 ns.
4. Programming and Erasing: Supports byte/word programming and sector/chip erase operations.
5. Data Retention: Provides data retention of over 20 years, ensuring long-term reliability.
6. Endurance: Can endure up to 100,000 program/erase cycles per sector, making it suitable for frequent updates.
7. Security: Features hardware block protection for safeguarding critical data.
8. Packaging: Available in a TSOP48 package, suitable for space-constrained applications.
9. Temperature Range: Designed to operate over a wide temperature range, suitable for industrial applications.
These features make the M29F400FB55M3F2 suitable for applications requiring reliable, fast, and flexible non-volatile memory storage.
Pinout
1. Address Pins (A0-A18): Used to specify the memory address for read and write operations.
2. Data Pins (DQ0-DQ15): Used for inputting and outputting data. Depending on the mode, they can provide 8-bit or 16-bit data.
3. Chip Enable (E#): Activates the chip for operation.
4. Output Enable (G#): Enables the data output buffers during a read operation.
5. Write Enable (W#): Controls writing to the memory.
6. Reset/Power-Down (RP#): Resets the device or puts it in power-down mode.
7. Byte/Word Mode Select (BYTE#): Selects between 8-bit and 16-bit mode operation.
8. Ready/Busy Output (RB#): Indicates if the device is busy with an operation.
These features allow the M29F400FB55M3F2 to function as a flexible flash memory suitable for a variety of applications. Always refer to the datasheet for detailed pin descriptions and configurations.