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MMBF2201NT1G
+БОМMOSFET N-CH 20V 300MA SC70-3
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ПроизводительОнсеми
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Мфр. Часть #MMBF2201NT1G
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Лист данных MMBF2201NT1G DataSheet
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Спецификации
| Атрибут | Ценность |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 300mA, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 45 pF @ 5 V |
| Power Dissipation (Max) | 150mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-70-3 (SOT323) |
| Package / Case | SC-70, SOT-323 |
| Base Product Number | MMBF2201 |
Обзор
Description
MMBF2201NT1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications such as switching and amplification. This component features a low on-resistance, which enhances efficiency in power management tasks. With a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 1.2A, it operates optimally in low to moderately powered circuits.
The MMBF2201NT1G is commonly used in analog circuits, including audio and signal processing, due to its high gain and low distortion characteristics. It is packaged in a SOT-23 form factor, making it suitable for compact circuit designs.
This MOSFET is often favored for its reliability and performance, offering designers a versatile solution for managing electrical signals and loads. Overall, MMBF2201NT1G is a key component in modern electronics, enabling efficient operation in consumer, industrial, and automotive applications.
The MMBF2201NT1G is commonly used in analog circuits, including audio and signal processing, due to its high gain and low distortion characteristics. It is packaged in a SOT-23 form factor, making it suitable for compact circuit designs.
This MOSFET is often favored for its reliability and performance, offering designers a versatile solution for managing electrical signals and loads. Overall, MMBF2201NT1G is a key component in modern electronics, enabling efficient operation in consumer, industrial, and automotive applications.
Equivalent
The MMBF2201NT1G is a N-channel MOSFET. Equivalent products include the 2N7000, BS170, and BSS138. These alternatives may have similar electrical characteristics but check specific parameters like Vds, Id, and Rds(on) for compatibility in your application. Always refer to the datasheets for detailed comparisons.
Features
The MMBF2201NT1G is a N-channel MOSFET designed for low-power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 250mA.
3. On-Resistance: It offers a low on-resistance (R_DS(on)) of around 1.5 ohms at a gate-source voltage (V_GS) of 10V, enhancing efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 0.8V to 2.0V, allowing for effective operation in low-voltage applications.
5. Package: It comes in a compact SOT-23 package, suitable for space-constrained designs.
6. Fast Switching: Its inherent fast switching capability makes it ideal for applications like switching regulators and low-side switching.
Overall, the MMBF2201NT1G is well-suited for consumer electronics, automotive, and other low-power circuits requiring efficient switching performance.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 250mA.
3. On-Resistance: It offers a low on-resistance (R_DS(on)) of around 1.5 ohms at a gate-source voltage (V_GS) of 10V, enhancing efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 0.8V to 2.0V, allowing for effective operation in low-voltage applications.
5. Package: It comes in a compact SOT-23 package, suitable for space-constrained designs.
6. Fast Switching: Its inherent fast switching capability makes it ideal for applications like switching regulators and low-side switching.
Overall, the MMBF2201NT1G is well-suited for consumer electronics, automotive, and other low-power circuits requiring efficient switching performance.
Pinout
The MMBF2201NT1G is a dual N-channel MOSFET in a SOT-23 package. It has a total of 6 pins. The pin configuration is as follows:
1. Gate 1 (G1) - Controls the first MOSFET.
2. Drain 1 (D1) - The drain terminal for the first MOSFET.
3. Source 1 (S1) - The source terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second MOSFET.
5. Drain 2 (D2) - The drain terminal for the second MOSFET.
6. Source 2 (S2) - The source terminal for the second MOSFET.
The device is used for low-voltage switching applications and is suitable for automated circuits due to its compact size and efficiency. The MMBF2201NT1G is designed for general-purpose switching and amplification.
1. Gate 1 (G1) - Controls the first MOSFET.
2. Drain 1 (D1) - The drain terminal for the first MOSFET.
3. Source 1 (S1) - The source terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second MOSFET.
5. Drain 2 (D2) - The drain terminal for the second MOSFET.
6. Source 2 (S2) - The source terminal for the second MOSFET.
The device is used for low-voltage switching applications and is suitable for automated circuits due to its compact size and efficiency. The MMBF2201NT1G is designed for general-purpose switching and amplification.
Manufacturer
The MMBF2201NT1G is manufactured by ON Semiconductor, a global supplier of semiconductor components. ON Semiconductor specializes in designing and manufacturing a wide range of electronic components, including discrete semiconductors, analog ICs, and power management solutions. The company serves various markets, including automotive, industrial, telecommunications, and consumer electronics. ON Semiconductor focuses on innovation and sustainability, providing efficient solutions for energy management and communication technologies. It is recognized for its commitment to quality and reliability in semiconductor products.
Application
The MMBF2201NT1G is a N-channel MOSFET primarily used in low-voltage applications. Its application areas include switching and amplifying signals in analog and digital circuits. It is suitable for low-power applications in portable devices, battery management systems, and power distribution. Additionally, it can be used in RF amplification, automotive electronics, and general-purpose switching. Its low gate threshold voltage makes it ideal for interfacing with microcontrollers and other low-voltage logic devices.
Package
The MMBF2201NT1G is packaged in a SOT-23 form factor. This compact surface-mount package is designed for low-power applications, providing efficient thermal performance and electrical characteristics.
