Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| FETType | N-Channel |
| Voltage-Breakdown(V(BR)GSS) | 30 V |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-Drain(Idss)@Vds(Vgs=0) | 25 mA @ 15 V |
| Voltage-Cutoff(VGSoff)@Id | 2 V @ 10 nA |
| InputCapacitance(Ciss)(Max)@Vds | 14pF @ 15V |
| Resistance-RDS(On) | 60 Ohms |
| Power-Max | 225 mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
Обзор
Description
The MMBF4392LT1G is a N-channel JFET (Junction Field-Effect Transistor) designed for low-power, high-frequency applications. Key features include:
- Low leakage current (ideal for signal switching).
- High input impedance (suitable for amplifiers).
- Small SOT-23 package (space-efficient).
It operates at 30V max drain-source voltage (VDS) and 50mA max drain current (ID). Common uses include RF amplifiers, analog switches, and sensor interfaces.
This JFET is RoHS-compliant and optimized for portable and precision circuits. Check the datasheet for detailed specs like transconductance (gfs) and pinch-off voltage (VP).
- Low leakage current (ideal for signal switching).
- High input impedance (suitable for amplifiers).
- Small SOT-23 package (space-efficient).
It operates at 30V max drain-source voltage (VDS) and 50mA max drain current (ID). Common uses include RF amplifiers, analog switches, and sensor interfaces.
This JFET is RoHS-compliant and optimized for portable and precision circuits. Check the datasheet for detailed specs like transconductance (gfs) and pinch-off voltage (VP).
Equivalent
Equivalent products to the MMBF4392LT1G (N-channel JFET) include:
- 2N4392 (through-hole equivalent)
- J113 (similar characteristics)
- BF245B (alternative JFET)
- SST4392 (surface-mount option)
Check datasheets for exact parameter matching.
- 2N4392 (through-hole equivalent)
- J113 (similar characteristics)
- BF245B (alternative JFET)
- SST4392 (surface-mount option)
Check datasheets for exact parameter matching.
Features
The MMBF4392LT1G is an N-channel JFET transistor in a SOT-23 package. Key features:
- Low On-Resistance: ~25Ω (max) at \(V_{GS} = 0V\).
- High Input Impedance: Ideal for signal switching/amplification.
- Low Power Consumption: Suitable for battery-operated devices.
- Voltage Ratings: \(V_{DS} = 40V\) (max), \(V_{GS} = 40V\) (max).
- Current Handling: \(I_D = 50mA\) (continuous).
- Fast Switching: Useful for analog/digital applications.
- Small Form Factor: SOT-23 package for space-constrained designs.
Common uses: analog switches, amplifiers, and low-noise circuits.
- Low On-Resistance: ~25Ω (max) at \(V_{GS} = 0V\).
- High Input Impedance: Ideal for signal switching/amplification.
- Low Power Consumption: Suitable for battery-operated devices.
- Voltage Ratings: \(V_{DS} = 40V\) (max), \(V_{GS} = 40V\) (max).
- Current Handling: \(I_D = 50mA\) (continuous).
- Fast Switching: Useful for analog/digital applications.
- Small Form Factor: SOT-23 package for space-constrained designs.
Common uses: analog switches, amplifiers, and low-noise circuits.
Pinout
The MMBF4392LT1G is a N-channel JFET transistor in a SOT-23 package with 3 pins:
1. Gate (G) – Controls the conductivity between source and drain.
2. Drain (D) – Current flows in through this terminal.
3. Source (S) – Current flows out from this terminal.
Key features:
- Low leakage and high input impedance.
- Used in switching and amplification circuits.
- Common in low-power, high-frequency applications.
Pinout (SOT-23):
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
1. Gate (G) – Controls the conductivity between source and drain.
2. Drain (D) – Current flows in through this terminal.
3. Source (S) – Current flows out from this terminal.
Key features:
- Low leakage and high input impedance.
- Used in switching and amplification circuits.
- Common in low-power, high-frequency applications.
Pinout (SOT-23):
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
Manufacturer
The MMBF4392LT1G is manufactured by ON Semiconductor, now known as onsemi after rebranding in 2021.
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient solutions.
The MMBF4392LT1G is a JFET transistor designed for low-power applications.
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient solutions.
The MMBF4392LT1G is a JFET transistor designed for low-power applications.
Application
The MMBF4392LT1G is a JFET transistor commonly used in:
- Signal Switching: Low-power analog/digital switching.
- Amplification: Small-signal amplification in audio and RF circuits.
- Impedance Matching: High-input impedance buffering.
- Sensor Interfaces: Signal conditioning for sensors.
- Test Equipment: Precision measurement circuits.
Its low noise and high input impedance make it suitable for sensitive applications.
- Signal Switching: Low-power analog/digital switching.
- Amplification: Small-signal amplification in audio and RF circuits.
- Impedance Matching: High-input impedance buffering.
- Sensor Interfaces: Signal conditioning for sensors.
- Test Equipment: Precision measurement circuits.
Its low noise and high input impedance make it suitable for sensitive applications.
Package
The MMBF4392LT1G is a SOT-23 packaged N-channel JFET transistor. This small surface-mount package is compact, suitable for high-density PCB designs, and commonly used in low-power applications. The SOT-23 has three leads and is widely favored for its ease of assembly and reliability in consumer electronics and signal processing circuits.
