MMBT5089LT1G

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MMBT5089LT1G

+БОМ

TRANS NPN 25V 0.05A SOT23-3

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 50 mA
Voltage-CollectorEmitterBreakdown(Max) 25 V
VceSaturation(Max)@IbIc 500mV @ 1mA, 10mA
Current-CollectorCutoff(Max) 50nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 400 @ 100µA, 5V
Power-Max 300 mW
Frequency-Transition 50MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Обзор

Description

The MMBT5089LT1G is a high-frequency NPN bipolar junction transistor (BJT) commonly used in amplification and switching applications. Manufactured by ON Semiconductor, this transistor is known for its low noise figure, making it ideal for use in RF and audio frequency applications. It comes in a compact SOT-23 package, which is suitable for surface-mount technology (SMT) applications, offering ease of integration into modern electronic circuits.
Key specifications include a maximum collector current (Ic) of 100 mA, a maximum collector-emitter voltage (Vce) of 25 V, and a power dissipation of 225 mW. The MMBT5089LT1G also features a high current gain (hFE) typically ranging from 100 to 300, which is beneficial for signal amplification purposes.
This transistor is often utilized in circuits demanding high-frequency performance, such as RF amplifiers, oscillators, and signal processing components. Its robust performance and small form factor make it a reliable choice for designers looking to optimize space and performance in their electronic designs.

Equivalent

The MMBT5089LT1G is a NPN bipolar junction transistor commonly used in amplification and switching applications. Equivalent products include:
1. 2N5089
2. BC547
3. BC548
4. BC549
5. PN2222
These alternatives may vary slightly in parameters, so always check the datasheets to ensure compatibility with your specific requirements.

Features

The MMBT5089LT1G is a surface-mount NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Key features include:
1. High Gain: It offers a high DC current gain (hFE), which is beneficial for amplification tasks.
2. Low Noise: The transistor is engineered to ensure low noise performance, making it suitable for audio and signal processing applications.
3. Surface-Mount Package: Available in a compact SOT-23 package, it is ideal for space-constrained PCB designs.
4. Maximum Ratings: It has a collector-emitter voltage (Vceo) of 25V and a collector current (Ic) of 50mA, suitable for low-power applications.
5. Thermal Characteristics: Designed to operate over a wide temperature range, enhancing reliability in various environments.
These features make the MMBT5089LT1G a versatile transistor for various electronic circuits, especially where space, efficiency, and performance are critical considerations.

Pinout

The MMBT5089LT1G is a general-purpose NPN bipolar junction transistor (BJT). It typically comes in a SOT-23 package and has a pin count of three. The functions of the pins are as follows:
1. Pin 1 (Emitter): This pin is the emitter of the transistor, which is where current flows out of the transistor.
2. Pin 2 (Base): This pin is the base of the transistor, which controls the transistor's operation. A small current or voltage applied to the base allows a larger current to flow from the collector to the emitter.
3. Pin 3 (Collector): This pin is the collector of the transistor, which is where current flows into the transistor.
The MMBT5089LT1G is used in a variety of applications such as amplification and switching due to its high gain and low noise characteristics. It is suitable for use in low-power applications.

Manufacturer

The MMBT5089LT1G is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a leading semiconductor manufacturing company that specializes in intelligent power and sensing technologies. They provide a wide range of semiconductor solutions, including discrete and integrated power management, analog, sensors, logic, timing, connectivity, discrete, and custom devices. Onsemi serves various industries, including automotive, industrial, cloud power, consumer electronics, and communications. The company is recognized for its focus on energy-efficient innovations and sustainability.

Application

The MMBT5089LT1G is a high-frequency NPN bipolar junction transistor commonly used in various applications. Its primary areas include RF amplification, switching circuits, and signal processing. It is well-suited for RF and low-level, general-purpose amplification due to its high gain and low noise characteristics. Additionally, it is often used in communication equipment, audio amplification, and other electronic devices requiring efficient signal amplification and switching capabilities. Its compact surface-mount package makes it ideal for space-constrained applications in modern electronic designs.

Package

The MMBT5089LT1G is a surface-mount NPN bipolar junction transistor (BJT) packaged in the SOT-23 configuration. This package type is widely used in electronic circuits due to its compact size, making it suitable for high-density applications.

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