Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 600 mA |
| Voltage - Collector Emitter Breakdown(Max) | 140 V |
| Vce Saturation(Max) @ Ib Ic | 250mV @ 5mA, 50mA |
| Current - Collector Cutoff(Max) | 100nA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 60 @ 10mA, 5V |
| Power - Max | 225 mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Обзор
Description
The MMBT5550LT1G is a general-purpose NPN bipolar junction transistor (BJT) from ON Semiconductor, housed in a compact SOT-23 package. Key features include:
- High current gain (hFE): Typically 100–300 at 10mA.
- Voltage ratings: 160V collector-emitter (VCEO), 180V collector-base (VCBO).
- Current ratings: 600mA continuous collector current (IC).
- Low saturation voltage: Ideal for switching applications.
Common uses include amplification, switching, and signal processing in low-power circuits. Its small size and robust performance make it suitable for portable electronics, power management, and industrial controls.
For detailed specs, refer to the datasheet.
- High current gain (hFE): Typically 100–300 at 10mA.
- Voltage ratings: 160V collector-emitter (VCEO), 180V collector-base (VCBO).
- Current ratings: 600mA continuous collector current (IC).
- Low saturation voltage: Ideal for switching applications.
Common uses include amplification, switching, and signal processing in low-power circuits. Its small size and robust performance make it suitable for portable electronics, power management, and industrial controls.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the MMBT5550LT1G (NPN transistor, SOT-23) include:
- BC847B (Nexperia/ON Semiconductor)
- 2N5550 (TO-92 package, similar specs)
- MMBT5551 (higher VCE rating)
- KST5550 (Fairchild/ON Semi)
- PXT5550 (Diodes Inc.)
Check datasheets for exact parameter matching (e.g., VCE, hFE). SMD alternatives like BC847B are drop-in replacements in SOT-23.
- BC847B (Nexperia/ON Semiconductor)
- 2N5550 (TO-92 package, similar specs)
- MMBT5551 (higher VCE rating)
- KST5550 (Fairchild/ON Semi)
- PXT5550 (Diodes Inc.)
Check datasheets for exact parameter matching (e.g., VCE, hFE). SMD alternatives like BC847B are drop-in replacements in SOT-23.
Features
The MMBT5550LT1G is an NPN bipolar junction transistor (BJT) with the following key features:
- Type: NPN (General Purpose)
- Voltage Ratings:
- Collector-Emitter Voltage (V_CEO): 140V
- Collector-Base Voltage (V_CBO): 160V
- Emitter-Base Voltage (V_EBO): 6V
- Current Ratings:
- Continuous Collector Current (I_C): 600mA
- Power Dissipation (P_D): 225mW
- Gain (h_FE): 50-250 (at 10mA, 1V)
- Package: SOT-23 (Small Surface-Mount)
- Switching Speed: Moderate (Transition Frequency ~100MHz)
Ideal for amplification and switching in low-power applications.
- Type: NPN (General Purpose)
- Voltage Ratings:
- Collector-Emitter Voltage (V_CEO): 140V
- Collector-Base Voltage (V_CBO): 160V
- Emitter-Base Voltage (V_EBO): 6V
- Current Ratings:
- Continuous Collector Current (I_C): 600mA
- Power Dissipation (P_D): 225mW
- Gain (h_FE): 50-250 (at 10mA, 1V)
- Package: SOT-23 (Small Surface-Mount)
- Switching Speed: Moderate (Transition Frequency ~100MHz)
Ideal for amplification and switching in low-power applications.
Pinout
The MMBT5550LT1G is a SOT-23 packaged NPN bipolar junction transistor (BJT) with 3 pins:
1. Emitter (E) – Output for current flow.
2. Base (B) – Controls transistor switching/amplification.
3. Collector (C) – Main current-carrying terminal.
Key Functions:
- General-purpose amplification and switching.
- Max Ratings: 160V collector-emitter voltage (VCEO), 600mA collector current (IC).
- Low-power applications (e.g., signal amplification, driver circuits).
Compact and widely used in small-signal circuits.
1. Emitter (E) – Output for current flow.
2. Base (B) – Controls transistor switching/amplification.
3. Collector (C) – Main current-carrying terminal.
Key Functions:
- General-purpose amplification and switching.
- Max Ratings: 160V collector-emitter voltage (VCEO), 600mA collector current (IC).
- Low-power applications (e.g., signal amplification, driver circuits).
Compact and widely used in small-signal circuits.
Manufacturer
The MMBT5550LT1G is manufactured by ON Semiconductor, now known as onsemi after rebranding in 2021.
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. They produce components for automotive, industrial, and consumer electronics, focusing on energy efficiency and innovation.
The MMBT5550LT1G is a general-purpose NPN transistor in a small SOT-23 package, commonly used for amplification and switching.
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. They produce components for automotive, industrial, and consumer electronics, focusing on energy efficiency and innovation.
The MMBT5550LT1G is a general-purpose NPN transistor in a small SOT-23 package, commonly used for amplification and switching.
Application
The MMBT5550LT1G, an NPN bipolar junction transistor (BJT), is commonly used in:
1. Switching Circuits – Fast switching in digital and power applications.
2. Amplification – Small-signal amplification in audio and RF stages.
3. Driver Stages – Controlling relays, LEDs, or other transistors.
4. Signal Processing – Used in oscillators, modulators, and detectors.
5. Consumer Electronics – Found in devices like TVs, radios, and mobile gadgets.
Its SOT-23 package makes it suitable for compact, low-power designs.
1. Switching Circuits – Fast switching in digital and power applications.
2. Amplification – Small-signal amplification in audio and RF stages.
3. Driver Stages – Controlling relays, LEDs, or other transistors.
4. Signal Processing – Used in oscillators, modulators, and detectors.
5. Consumer Electronics – Found in devices like TVs, radios, and mobile gadgets.
Its SOT-23 package makes it suitable for compact, low-power designs.
Package
The MMBT5550LT1G is a SOT-23 packaged NPN bipolar junction transistor (BJT). This small surface-mount package is widely used for general-purpose amplification and switching applications. The SOT-23 type offers compact dimensions (approx. 2.9mm x 1.3mm x 0.95mm), making it suitable for space-constrained PCB designs. It has three pins (emitter, base, collector) and is RoHS compliant.
