MRF1518NT1

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MRF1518NT1

+БОМ

FET RF 40V 520MHZ PLD-1.5

  • ПроизводительКомпания NXP USA Inc.

  • Мфр. Часть #MRF1518NT1

  • Лист данных MRF1518NT1 DataSheet

  • Пакет PLD-1.5

  • В наличии4044

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Obsolete
TransistorType LDMOS
Frequency 520MHz
Gain 13dB
Voltage-Test 12.5 V
CurrentRating(Amps) 4A
Current-Test 150 mA
Power-Output 8W
Voltage-Rated 40 V
Package/Case PLD-1.5

Обзор

Description

The MRF1518NT1 is a high-power RF LDMOS transistor designed by NXP Semiconductors for industrial, scientific, and medical (ISM) applications, as well as broadcast and RF power amplification. Key features include:
- Frequency Range: 1.8–600 MHz
- Output Power: Up to 300W (dependent on frequency and configuration)
- High Efficiency: Optimized for Class AB operation
- Robustness: Integrated ESD protection and high thermal stability
- Package: NI-1230-4 (flanged, bolt-down for heat dissipation)
Common applications include RF amplifiers in FM broadcast, HF/VHF/UHF systems, and plasma generators. It operates at 28V and offers excellent linearity and ruggedness under high SWR conditions.
For detailed specs, refer to the NXP datasheet.

Features

The MRF1518NT1 is an N-channel RF power MOSFET from NXP Semiconductors, designed for high-frequency applications. Key features:
- Frequency Range: 1.8–600 MHz
- Output Power: 300 W (typical @ 28V, 30 MHz)
- Voltage Rating: 50 V
- Gain: 19 dB (typical @ 30 MHz)
- Efficiency: 70% (typical @ 30 MHz)
- Package: TO-272 (flanged, 4-bolt)
- Matching: Input/output pre-matched for 50 Ω
- Applications: HF/VHF/UHF amplifiers, broadcast, industrial, and amateur radio
Robust and reliable, it supports high-power RF amplification with excellent thermal performance.

Pinout

The MRF1518NT1 is an RF power MOSFET transistor in a TO-272-4 (FLANGE) package with 4 pins:
1. Gate (G) – Controls the transistor's conduction.
2. Drain (D) – Main current path (RF output).
3. Source (S) – Ground reference (connected to flange).
4. Flange – Electrically the same as Source, used for heat dissipation.
Function: Designed for RF power amplification in 30–512 MHz applications (e.g., industrial, broadcast, and amateur radio). It operates at 28V and delivers high power (up to 300W peak in pulsed modes).
Key Features:
- High gain & efficiency.
- Rugged for VSWR mismatch.
- Internally matched for 50Ω.

Application

The MRF1518NT1 is a high-power RF transistor commonly used in:
1. RF Amplification – Boosts signals in communication systems.
2. Broadcast Transmitters – Used in FM, TV, and shortwave broadcasting.
3. Industrial Heating – Powers RF heating and plasma generation.
4. Amateur Radio – Enhances signal strength in ham radio setups.
5. Military & Aerospace – Supports radar and secure communication systems.
Its high efficiency and ruggedness make it ideal for demanding RF applications.

Package

The MRF1518NT1 is a high-power RF transistor packaged in a TO-272-4 (Flange Mount) ceramic package. It features four leads, including a flange for grounding and heat dissipation, making it suitable for high-frequency and high-power applications like RF amplifiers. The package ensures robust thermal performance and mechanical stability.

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