| Атрибут |
Ценность |
| Supplier |
Microchip Technology |
| Package / Case |
Bulk |
| Part Status |
Active |
| FET Type |
2 N Channel (Phase Leg) |
| FET Feature |
Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
| Current - Continuous Drain(Id) @ 25°C |
495A (Tc) |
| Rds On(Max) @ Id Vgs |
5.2mOhm @ 240A, 20V |
| Vgs(th)(Max) @ Id |
2.8V @ 18mA |
| Gate Charge(Qg)(Max) @ Vgs |
1392nC @ 20V |
| Input Capacitance(Ciss)(Max) @ Vds |
18100pF @ 1000V |
| Power - Max |
2.031kW (Tc) |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Mounting Type |
Chassis Mount |
