Спецификации
| Атрибут | Ценность |
| Supplier | Microchip Technology |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | 4 N-Channel |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 700V |
| Current - Continuous Drain(Id) @ 25°C | 124A (Tc) |
| Rds On(Max) @ Id Vgs | 19mOhm @ 40A, 20V |
| Vgs(th)(Max) @ Id | 2.4V @ 4mA |
| Gate Charge(Qg)(Max) @ Vgs | 215nC @ 20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4500pF @ 700V |
| Power - Max | 365W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
