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Спецификации
| Атрибут | Ценность |
| Package / Case | Tray |
| Part Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3 |
| Memory Size | 4Gb (256M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 1.066 GHz |
| Access Time | 20 ns |
| Voltage - Supply | 1.425V ~ 1.575V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
Обзор
Description
MT41J256M16HA-093G:E is a Micron DDR3 SDRAM memory device. It provides 4 gigabits of capacity per device, organized as 256M × 16 bits. It belongs to the MT41J256M16HA family, with the -093G speed grade and an E (extended) temperature variant. It is a standard DDR3 memory chip intended for use on PCBs and memory modules, interfaced to a memory controller. For exact electrical specs (voltage, timing), temperature range, and packaging, refer to the official Micron datasheet for MT41J256M16HA-093G:E.
Features
Key features of MT41J256M16HA-093G:E (Micron DDR3L SDRAM):
- Organization: 256M × 16 (4 Gb per die)
- Type/Voltage: DDR3L SDRAM, unbuffered, non-ECC, 1.35 V (VDD/VDDQ)
- Banks/Burst: 8 banks, burst length 8 (BL8)
- Speed grade: -093G:E (approx. 933 MT/s, DDR3-933)
- Data bus: 16-bit wide
- Refresh/Power: auto-refresh, self-refresh, partial array self-refresh, deep power-down
- Other: standard DDR3 features including DLL-based timing, ZQ calibration for impedance.
- Organization: 256M × 16 (4 Gb per die)
- Type/Voltage: DDR3L SDRAM, unbuffered, non-ECC, 1.35 V (VDD/VDDQ)
- Banks/Burst: 8 banks, burst length 8 (BL8)
- Speed grade: -093G:E (approx. 933 MT/s, DDR3-933)
- Data bus: 16-bit wide
- Refresh/Power: auto-refresh, self-refresh, partial array self-refresh, deep power-down
- Other: standard DDR3 features including DLL-based timing, ZQ calibration for impedance.
Pinout
- Pin count: 96-pin BGA (96 pins).
- Function: 4 Gbit DDR3 SDRAM device with 256M × 16 organization (i.e., 512 MB per die), a synchronous memory used as system DRAM.
- Function: 4 Gbit DDR3 SDRAM device with 256M × 16 organization (i.e., 512 MB per die), a synchronous memory used as system DRAM.
Manufacturer
- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs, manufactures, and sells memory and storage technologies (DRAM, NAND/NOR flash). It is one of the world’s largest memory manufacturers.
- What kind of company: An American multinational semiconductor company that designs, manufactures, and sells memory and storage technologies (DRAM, NAND/NOR flash). It is one of the world’s largest memory manufacturers.
Application
MT41J256M16HA-093G:E is a Micron DRAM device (256M x 16, ~4 Gb). Typical application areas include:
- Notebook/tablet memory and small form factor systems
- Desktop PCs and memory modules
- Embedded systems and consumer electronics (set-top boxes, media players, cameras)
- Networking, telecom, and storage controllers
- Graphics/Video processing and gaming consoles
- Automotive infotainment and industrial control systems
Note: exact use depends on the device’s speed grade and interface (e.g., DDR variants).
- Notebook/tablet memory and small form factor systems
- Desktop PCs and memory modules
- Embedded systems and consumer electronics (set-top boxes, media players, cameras)
- Networking, telecom, and storage controllers
- Graphics/Video processing and gaming consoles
- Automotive infotainment and industrial control systems
Note: exact use depends on the device’s speed grade and interface (e.g., DDR variants).
Package
FBGA package, 96-ball (FBGA-96), lead-free (E suffix).
