MT41J256M16HA-107:E

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MT41J256M16HA-107:E

+БОМ

IC DRAM 4GBIT PARALLEL 96FBGA

  • ПроизводительКомпания Micron Technology Inc.

  • Мфр. Часть #MT41J256M16HA-107:E

  • Пакет 96-FBGA (9x14)

  • В наличии5066

365 Дни гарантии качества

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Спецификации

Атрибут Ценность
Package Tray
ProductStatus Obsolete
MemoryType Volatile
MemoryFormat DRAM
Technology SDRAM - DDR3
MemorySize 4Gb (256M x 16)
MemoryInterface Parallel
ClockFrequency 933 MHz
AccessTime 20 ns
Voltage-Supply 1.425V ~ 1.575V
OperatingTemperature 0°C ~ 95°C (TC)
MountingType Surface Mount
Package/Case 96-TFBGA

Обзор

Description

MT41J256M16HA-107:E is Micron’s DDR3 SDRAM device. It is organized as 256M x 16 (4 Gbit total, i.e., 512 MB) with 8 banks. It operates at the DDR3 memory voltage (typical ~1.5V) and supports high-speed data transfer per the DDR3 standard. The suffix -107 denotes a specific speed grade within the MT41J family (exact timing/data-rate details are in the datasheet). The trailing :E indicates an RoHS-compliant (lead-free) variant. This is a bare memory device (not a module) intended to be used with a memory controller in systems such as embedded devices or PCs, following Micron’s timing and electrical specifications. For precise timings, voltages, and packaging, refer to the MT41J256M16HA-107:E datasheet.

Equivalent

MT41J256M16HA-107:E is Micron DDR3 SDRAM, 4 Gb total, 256M × 16, DDR3-1066 (1.5V). Equivalents are other vendors’ 256M×16 DDR3-1066/1333 devices with the same timing. Cross-references from SK hynix and Samsung exist but vary by timing; no universal one-to-one replacement. For exact substitutes, use Micron’s Cross Reference tool or provide package, speed (MHz/CL), and voltage.

Features

MT41J256M16HA-107:E is a Micron DDR3L SDRAM device. Key features (typical):
- Density/organization: 256M x 16 (≈4 Gbit) per die
- Interface: 16-bit data width, unbuffered, 8 banks
- Speed grade: DDR3-1066 MT/s (PC3-8500) with 8n prefetch; -107 indicates the 1066 speed bin
- Voltage: DDR3L operation at 1.35 V (1.5 V tolerant)
- Memory timing: burst length 8, pipelined operation
- On-die features: ZQ calibration, dynamic ODT, partial array self-refresh
- Power: optimized for low-voltage operation and mobile/embedded use
- Packaging: standard DDR3L device package (compact form factor)
For exact timing (tRCD, tRP, CL) and configuration details, consult the official Micron datasheet.

Pinout

- Pin count: 96-ball BGA package
- Function: Micron DDR3 SDRAM device, 256M × 16 organization (4 Gbit total), 8 banks, typical 1.5V operation (speed grade -107 indicating 1066 MT/s range).

Manufacturer

- Manufacturer: Micron Technology, Inc.
- What kind of company: A US-based semiconductor company that designs and manufactures memory and storage products (DRAM, NAND/NOR Flash); one of the world’s leading memory chip makers.

Application

MT41J256M16HA-107:E is a 4 Gb DDR3L SDRAM (256 Mb × 16) used as system memory. Typical application areas:
- Laptops/notebooks and mobile/embedded platforms
- Desktops and all-in-one PCs
- Entry-level servers and storage controllers
- Networking equipment (routers, switches)
- Embedded/industrial applications (automation, medical devices, digital signage)
- Consumer electronics requiring high-density DDR3 memory
(DDR3L 1.35–1.5V variants)

Package

MT41J256M16HA-107:E uses a 96-ball Fine-pitch FBGA package (FBGA96).

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