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MT47H128M8CF-25:H
+БОМIC DRAM 1GBIT PARALLEL 60FBGA
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ПроизводительКомпания Micron Technology Inc.
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Мфр. Часть #MT47H128M8CF-25:H
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В наличии8262
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Obsolete |
| Base Product Number | MT47H128M8 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 1Gbit |
| Memory Organization | 128M x 8 |
| Memory Interface | Parallel |
| Clock Frequency | 400 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package | 60-TFBGA |
| Supplier Device Package | 60-FBGA (8x10) |
| Packaging | Tray |
| Access Time | 400 ps |
Обзор
Description
The "-25" suffix indicates a maximum access time of 25 nanoseconds, which is critical for ensuring high-speed data transfer. The "H" at the end signifies that it supports high-speed operation. With a synchronous dynamic random access memory (SDRAM) architecture, it allows for high bandwidth and efficient data processing. The device is commonly used in laptops, desktops, and embedded systems requiring reliable and fast memory solutions.
Overall, the MT47H128M8CF-25:H is designed for applications demanding robust performance and energy efficiency.
Equivalent
1. Hynix H5TQ1G83AFR
2. Samsung K4B4G1646F
3. Micron MT41K128M16HA
4. Nanya NT5CB256M8HA
Always verify specific parameters such as speed, voltage, and pin configuration for compatibility in your application.
Features
1. Type: DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory).
2. Density: 1 Gigabit (128 Megabytes per die).
3. Configuration: 8 bits x 8 banks.
4. Speed: Operates at a data rate of up to 1600 MT/s.
5. Voltage: Core voltage of 1.5V, with low-power options available.
6. Package: Available in a compact FBGA (Fine Ball Grid Array) package.
7. Latency: Typically has CL (CAS Latency) options of 7 or 9.
8. Applications: Suitable for use in consumer electronics, computing devices, and other applications requiring reliable memory performance.
9. Temperature Range: Standard operating temperature range typically from 0°C to 85°C.
This chip is designed to offer high performance and energy efficiency for various high-speed memory applications.
Pinout
The primary functions of this chip include serving as volatile memory for data storage in computing applications. It features a 1Gb (128MB x 8) capacity, operates with a data rate of up to 1600 MT/s (megatransfers per second), and requires a supply voltage of 1.5V (with a reference voltage of 0.6V). The "H" at the end of the part number indicates a high-density configuration.
Key functions include data read/write operations, address input for memory access, and control signals for synchronization and timing. The chip supports various modes of operation, such as burst mode and deep power-down mode, for power efficiency and performance optimization.
Manufacturer
Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the largest memory manufacturers in the world, competing with other major companies in the semiconductor industry. The company's focus is on innovation and technology development, providing high-performance memory products for a wide range of markets, including consumer electronics, automotive, and data centers. Micron's commitment to research and development positions it as a key player in the ongoing evolution of memory technology.
Application
1. Consumer Electronics: Mobile devices, laptops, and tablets.
2. Networking Equipment: Routers and switches for data handling.
3. Gaming Consoles: For enhanced graphics and performance.
4. Embedded Systems: Industrial automation and control systems.
5. Servers: To boost performance in data centers and cloud computing.
Its features support high-speed data processing, making it suitable for applications requiring efficient memory solutions.
Package
Frequently Asked Questions
Q: What is the memory size and organization of the MT47H128M8CF-25:H?
A: It is a 1Gbit DDR2 SDRAM organized as 128M x 8 bits, suitable for high-density memory applications.
Q: What is the maximum clock frequency this DRAM supports?
A: It supports a maximum clock frequency of 400 MHz, enabling fast data transfer rates for DDR2 applications.
Q: What is the operating voltage range for this component?
A: The supply voltage range is 1.7V to 1.9V, with a typical nominal voltage of 1.8V for standard DDR2 operation.
Q: What is the access time and write cycle time for this memory?
A: Access time is 400 ps, and write cycle time (word, page) is 15ns, ensuring efficient read/write performance.
Q: Can this component be used in industrial temperature ranges?
A: No, its operating temperature range is 0°C to 85°C (TC), which is suitable for commercial applications, not extended industrial.
Q: What package does the MT47H128M8CF-25:H come in?
A: It comes in a 60-TFBGA (Thin Fine-Pitch Ball Grid Array) package, with a supplier device package size of 60-FBGA (8x10 mm).
Q: Is this part currently in production or obsolete?
A: This part is marked as Obsolete in the lifecycle status, so it is not recommended for new designs; consider alternatives if available.
