MT47H64M16HR-25E:H

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MT47H64M16HR-25E:H

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IC DRAM 1GBIT PARALLEL 84FBGA

  • ПроизводительКомпания Micron Technology Inc.

  • Мфр. Часть #MT47H64M16HR-25E:H

  • В наличии5047

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Спецификации

Атрибут Ценность
Part Status Obsolete
Base Product Number MT47H64M16
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Size 1Gbit
Memory Organization 64M x 16
Memory Interface Parallel
Clock Frequency 400 MHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature 0°C ~ 85°C (TC)
Mounting Type Surface Mount
Package 84-TFBGA
Supplier Device Package 84-FBGA (8x12.5)
Packaging Tray
Access Time 400 ps

Обзор

Description

The MT47H64M16HR-25E:H is a high-speed DRAM component from Micron Technology, specifically belonging to their DDR2 SDRAM product line. It is designed to offer improved performance and efficiency, suitable for a wide range of applications requiring fast data processing. This memory chip features a 1Gb density configured as 64 Meg x 16 bits, operating at a voltage of 1.8V. It supports a maximum data rate of 800 MT/s (megatransfers per second) and a CAS latency of 5, which contributes to its efficient data handling capabilities.
The "25E" in the part number indicates a speed grade, with the "H" suffix denoting a RoHS-compliant, lead-free package. The memory chip is well-suited for use in computing and networking equipment, where high-speed data access and reliability are critical. It incorporates features such as on-die termination (ODT) and automatic power-saving modes to enhance performance and energy efficiency. Overall, the MT47H64M16HR-25E:H is a versatile memory solution for modern electronic systems.

Equivalent

The MT47H64M16HR-25E:H is a DDR2 SDRAM chip by Micron. Equivalent products would typically be other DDR2 SDRAM chips with similar specifications, such as those from manufacturers like Samsung, Hynix, or Kingston. Look for chips with the same memory configuration (64M x 16), similar speed (DDR2-800), and voltage requirements (1.8V). For specific part numbers, the manufacturer's datasheets or cross-reference tools should be consulted to ensure compatibility in terms of speed, timing, and package.

Features

The MT47H64M16HR-25E:H is a DRAM chip from the DDR2 SDRAM family, manufactured by Micron Technology. Key features include:
1. Density and Organization: 1Gb density organized as 64M x 16.
2. Speed: Operates with a clock speed of 400 MHz, supporting data rates up to 800 MT/s (megatransfers per second).
3. Voltage: Runs at a voltage of 1.8V, which is standard for DDR2 memory, offering a balance between performance and power efficiency.
4. Package: Available in FBGA (Fine-pitch Ball Grid Array) packaging for efficient thermal and electrical performance.
5. CAS Latency: Supports CAS latencies of 3, 4, and 5, allowing for flexible timing configurations.
6. Error Correction: Like most standard DDR2 modules, it typically does not include error correction, making it suitable for consumer and standard computing applications rather than mission-critical environments.
7. Temperature Range: Operates in standard and industrial temperature ranges, ensuring reliability in various environmental conditions.
These features make it suitable for a wide range of applications, from consumer electronics to computing platforms requiring efficient memory solutions.

Pinout

The MT47H64M16HR-25E:H is a DRAM chip, specifically a DDR2 SDRAM, manufactured by Micron Technology. It comes in a 84-ball FBGA (Fine-Pitch Ball Grid Array) package. The device is organized as 64 Meg x 16, making it a 1 Gigabit (Gb) memory chip.
In terms of functionality, this DDR2 SDRAM is used for high-speed data storage and retrieval in computing applications. It operates with a 1.8V power supply and supports high-speed data transfer rates, typically up to 800 MT/s (Megatransfers per second). It is designed for use in applications like computer memory and other areas where high-speed, temporary data storage is required.
The pin functions include data input/output (DQ), address input (A), bank address (BA), control signals such as clock (CK, CK#), clock enable (CKE), chip select (CS#), row address strobe (RAS#), column address strobe (CAS#), write enable (WE#), and others necessary for DDR2 operational modes and configurations.

Manufacturer

The MT47H64M16HR-25E:H is manufactured by Micron Technology, Inc. Micron is a leading American multinational corporation specializing in the production of semiconductor devices, primarily memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is well-regarded for its innovation in dynamic random-access memory (DRAM), NAND flash memory, and other memory technologies. The company serves a diverse range of industries, including consumer electronics, computing, mobile, automotive, and data center markets. Micron is known for its focus on advancing technology to meet the demands of increasingly data-driven applications and environments.

Application

The MT47H64M16HR-25E:H is a DDR2 SDRAM chip commonly used in applications requiring high-speed and efficient memory performance. Its application areas include:
1. Computing Devices: Used in desktops, laptops, and servers to enable faster data processing and multitasking capabilities.
2. Networking Equipment: Supports routers, switches, and other networking hardware for improved data throughput and performance.
3. Consumer Electronics: Integrated into gaming consoles, digital TVs, and set-top boxes for enhanced multimedia processing.
4. Embedded Systems: Ideal for automotive electronics, industrial controls, and IoT devices where reliable memory performance is essential.
5. Telecommunications: Employed in base stations and other telecom equipment for efficient data handling.

Package

The MT47H64M16HR-25E:H is a DRAM chip that comes in a 84-ball FBGA (Fine-Pitch Ball Grid Array) package. This package type is known for its compact size and efficient heat dissipation, making it suitable for high-density memory applications.

Frequently Asked Questions


Q: What is the memory size and organization of this Micron DRAM?
A: It has a memory size of 1Gbit, organized as 64M x 16 bits, suitable for high-density data storage.


Q: What is the clock frequency and access time of the MT47H64M16HR-25E:H?
A: The clock frequency is 400 MHz, with a rapid access time of 400 ps, ensuring high-speed data transfer.


Q: Is this component still available for new designs?
A: The part status is listed as Obsolete, so it is not recommended for new designs. Verify stock for repairs or legacy support.


Q: What voltage range does this SDRAM - DDR2 device require?
A: It requires a supply voltage of 1.7V to 1.9V, typical for DDR2 memory applications.


Q: What is the memory interface and write cycle time for this part?
A: It uses a parallel memory interface with a write cycle time of 15ns (word, page), ensuring fast write operations.


Q: Can this component operate in extended temperature ranges?
A: Yes, it operates within a temperature range of 0°C to 85°C (TC), suitable for industrial or commercial environments.


Q: What package does the MT47H64M16HR-25E:H come in?
A: It comes in an 84-TFBGA package with a supplier device package of 84-FBGA (8x12.5mm), surface mount.


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