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MUN5330DW1T1G
+БОМTRANS PREBIAS 1NPN 1PNP 50V SC88
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ПроизводительОнсеми
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Мфр. Часть #MUN5330DW1T1G
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Лист данных MUN5330DW1T1G DataSheet
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Пакет SC-88
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В наличии16706
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector(Ic)(Max) | 100mA |
| Voltage - Collector Emitter Breakdown(Max) | 50V |
| Resistor - Base(R1) | 1kOhms |
| Resistor - Emitter Base(R2) | 1kOhms |
| DC Current Gain(h FE)(Min) @ Ic Vce | 3 @ 5mA, 10V |
| Vce Saturation(Max) @ Ib Ic | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff(Max) | 500nA |
| Power - Max | 250mW |
| Mounting Type | Surface Mount |
Обзор
Description
If MUN5330DW1T1G is a technical or product identifier, such as for an appliance or electronic device, the introduction would focus on its key features, specifications, and intended use, as well as how it fits into the broader product line or technological landscape.
For accurate details tailored to your specific context, it's essential to refer to the official documentation or resources provided by the institution or manufacturer associated with MUN5330DW1T1G.
Equivalent
1. DTC143EKA from Rohm
2. DTC143EE from Diodes Incorporated
3. PDTC143EK from Nexperia
4. BC847BPN in special configurations
Ensure that you check the specific parameters and pin configurations, as they can vary slightly between manufacturers and might impact the suitability for your application.
Features
1. Built-in Resistors: Contains two resistors for biasing — a 4.7 kΩ input resistor and a 4.7 kΩ base-emitter resistor, which facilitate easier circuit integration.
2. Compact Package: Offered in a SOT-23 package, which is ideal for space-constrained applications, supporting efficient PCB design.
3. Low Power Consumption: Suitable for low-power applications due to its small size and integrated resistors, reducing component count.
4. Wide Applications: Commonly used in switching applications, signal processing, and amplification in various consumer electronics and communication devices.
5. Electrical Characteristics: Provides a collector current (Ic) of up to 100mA and a collector-emitter voltage (Vceo) of 50V, making it versatile for different voltage levels.
These features make the MUN5330DW1T1G ideal for simplifying design and reducing costs in compact electronic projects.
Pinout
The pin configuration typically includes:
1. Three pins for the connections of two NPN transistors:
- Two input pins (one for each transistor base),
- Two combined output pins (each connected to the collector),
- Two emitter pins (commonly connected to ground).
These transistors include internal resistors that are used to limit the input current and provide biasing, allowing for direct interfacing with most microcontrollers and logic circuits without additional external components. The integration of these resistors simplifies circuit design and reduces component count.
Manufacturer
Application
1. Switching Circuits: Utilized in switching applications due to its fast switching speeds.
2. Amplification: Employed in amplification circuits to boost weak signals.
3. Signal Processing: Used in signal processing applications, including audio and RF circuits.
4. Consumer Electronics: Found in devices like televisions, radios, and other home electronics for various control functions.
5. Automotive Systems: Applied in automotive electronics for sensor interfacing and control systems.
6. Industrial Applications: Used in control systems and automation processes in industrial settings.
Its compact size and reliability make it suitable for space-constrained designs.