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MURF860G
+БОМDIODE GEN PURP 600V 8A TO220FP
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ПроизводительОнсеми
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Мфр. Часть #MURF860G
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Лист данных MURF860G DataSheet
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Пакет TO-220-2
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В наличии25380
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | Rochester Electronics, LLC,onsemi |
| Package / Case | Bulk,Tube |
| Series | SWITCHMODE™ |
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified(Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 8 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 60 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FP |
Обзор
Description
Key specifications of the MURF860G include a repetitive peak reverse voltage (VRRM) of 600 volts and an average rectified forward current (IF(AV)) of 8 amperes. It is packaged in a TO-220AC case, which provides effective heat dissipation and easy mounting on circuit boards or heat sinks. The fast recovery characteristics of the diode minimize switching losses in power electronics applications, enhance efficiency, and improve overall system performance.
Overall, the MURF860G is a reliable and versatile component, suitable for a range of high-speed rectification applications in power management systems.
Equivalent
1. Vishay's UF860
2. ON Semiconductor's MUR860
3. Fairchild's FFPF30UP20DN
4. STMicroelectronics' STTH806
5. NTE Electronics' NTE5808
These products are similar in terms of voltage and current ratings, recovery time, and package type. Always verify specifications and compatibility before substituting components.
Features
1. Reverse Voltage: It has a high reverse voltage capability, typically around 600 volts, making it suitable for a variety of applications.
2. Forward Current: It supports a continuous forward current of about 8 amperes, allowing it to handle significant power levels efficiently.
3. Recovery Time: The diode boasts an ultra-fast recovery time, usually in the range of 35 nanoseconds, which is crucial for high-speed applications and reduces power loss.
4. Low Leakage Current: It features a low reverse leakage current, improving efficiency and minimizing power dissipation under no-load conditions.
5. Package: The MURF860G is usually available in a standard TO-220 package, which provides good thermal performance and ease of mounting.
6. Temperature Range: It operates effectively over a wide temperature range, typically from -55°C to 175°C, ensuring reliability in various environments.
These features make the MURF860G suitable for use in switching power supplies, inverters, and other applications requiring fast and efficient rectification.
Pinout
1. Pin Count: The MURF860G has 2 pins.
2. Function:
- Anode (Pin 1): This is the positive terminal through which current enters the diode.
- Cathode (Pin 2): This is the negative terminal through which current exits the diode.
The MURF860G is designed for use in high-speed switching applications, power supplies, and other applications requiring fast recovery times. It can handle a maximum repetitive reverse voltage (V_RRM) of 600 volts and a continuous forward current (I_F) of up to 8 amperes.