Изображения являются только для ссылки
MX29GL256FLT2I-90Q
+БОМIC FLASH 256MBIT PARALLEL 56TSOP
-
ПроизводительМакроникс
-
Мфр. Часть #MX29GL256FLT2I-90Q
-
Лист данных MX29GL256FLT2I-90Q DataSheet
-
В наличии5413
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | MX29GL |
| Part Status | Active |
| Base Product Number | MX29GL256 |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 256Mbit |
| Memory Organization | 32M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 90ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 56-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 56-TSOP |
| Packaging | Tray |
| Access Time | 90 ns |
Обзор
Description
Key features of the MX29GL256FLT2I-90Q include a fast read speed, low power consumption, and high endurance, which ensure efficient performance and longevity. It also supports a wide range of temperatures, making it suitable for use in harsh environments.
The memory architecture of this chip is organized to allow for easy integration into existing systems, and it offers advanced security features to protect data integrity. The "-90Q" denotes specific speed and package attributes, where "90" refers to the access time in nanoseconds, indicating how quickly data can be read from the memory, and "Q" typically denotes the package type or specific performance characteristics. This makes it an ideal choice for applications where high-speed data access and reliability are critical.
Equivalent
1. Winbond W29GL256S family
2. Cypress S29GL256S family
3. Micron MT28EW256 family
4. Spansion/Cypress S29GL256P family
These products offer similar memory capacity and functionality, often used in embedded systems, and are typically interchangeable with adjustments for specific design requirements. Always verify pin compatibility and electrical specifications before substitution.
Features
1. Capacity: 256 Megabits (32 Megabytes) of storage.
2. Architecture: Utilizes NOR Flash architecture, which is ideal for code storage and direct code execution.
3. Read Speed: Fast access time with a typical read speed of 90 nanoseconds.
4. Voltage Range: Operates within a voltage range of 2.7V to 3.6V, making it suitable for battery-powered devices.
5. Package: Offered in a 56-pin TSOP (Type 1) package, facilitating easy integration into designs.
6. Sector Erase Capability: Features sector erase options, allowing portions of the memory to be erased independently.
7. Durability: Supports up to 100,000 erase/program cycles per sector, ensuring long-term reliability.
8. Data Retention: Offers data retention for up to 20 years, which is advantageous for archival storage.
9. Temperature Range: Designed to operate in industrial temperature ranges, typically from -40°C to +85°C.
These features make the MX29GL256FLT2I-90Q suitable for applications requiring reliable, non-volatile storage with fast read capabilities.
Pinout
The chip supports functions such as read, erase, and program operations. The "-90" part of the model number indicates a 90 ns (nanoseconds) access time, which refers to the time it takes for the chip to access data. The design and architecture provide sector-based erase capabilities, making it suitable for applications that require frequent updates to stored data. The MX29GL256F series offers reliable performance with features like block protection and fast programming.
Manufacturer
Application
Package
Frequently Asked Questions
Q: What is the memory density and organization of the MX29GL256FLT2I-90Q?
A: It is a 256Mbit NOR Flash device, organized as 32M x 8 bits, suitable for high-density code and data storage applications.
Q: What is the supply voltage range for this component?
A: The operating voltage is 2.7V to 3.6V, making it compatible with standard 3.3V logic systems.
Q: What is the access time and write cycle time?
A: It features a 90 ns access time and a 90 ns write cycle time (word/page), ensuring fast read and program operations.
Q: Can this device operate in industrial temperature environments?
A: Yes, it supports an operating temperature range of -40°C to 85°C, suitable for industrial and automotive-grade applications.
Q: What interface does the memory use?
A: It employs a parallel memory interface, providing high-speed data transfer for legacy and high-performance embedded systems.
Q: What package is available for this part?
A: It comes in a 56-TFSOP (0.724", 18.40mm Width) surface-mount package, with a supplier device package of 56-TSOP.
Q: Is this device a non-volatile memory type?
A: Yes, it is a non-volatile FLASH memory (NOR technology), retaining data without power, ideal for firmware and boot code storage.