MX52LM04A11XVW

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MX52LM04A11XVW

+БОМ

IC FLASH 4GB EMMC 153-BGA (11.5X

  • ПроизводительМакроникс

  • Мфр. Часть #MX52LM04A11XVW

  • Лист данных MX52LM04A11XVW DataSheet

  • В наличии4537

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Спецификации

Атрибут Ценность
Series e•MMC™
Part Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (MLC)
Memory Size 32Gbit
Memory Organization 4G x 8
Memory Interface eMMC_5.1
Clock Frequency 200 MHz
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -25°C ~ 85°C
Mounting Type Surface Mount
Package 153-VFBGA
Supplier Device Package 153-LFBGA (11.5x13)
Packaging Tray

Обзор

Description

The MX52LM04A11XVW is a low-power, high-performance CMOS static RAM (SRAM) device designed for various applications requiring fast data access. It typically features a memory capacity of 512 Kbit (64 K x 8 bits), making it suitable for embedded systems, consumer electronics, and telecommunications.
This SRAM operates with a supply voltage of 2.7V to 3.6V, ensuring compatibility with modern low-voltage devices. It offers fast access times, typically around 45 ns, allowing for efficient data retrieval and storage. The device employs a multiplexed address structure, simplifying the connection to microcontrollers and digital signal processors.
The MX52LM04A11XVW is characterized by a low standby current, making it ideal for battery-operated applications. Additionally, it supports asynchronous read and write operations, enhancing flexibility in data management.
Overall, the MX52LM04A11XVW is a reliable choice for engineers seeking a compact, efficient memory solution for various digital applications.

Equivalent

The MX52LM04A11XVW chip is a type of EEPROM. Equivalent products include the AT25DF041, SST39VF040, and M25P40. When looking for equivalents, consider factors like memory size, voltage requirements, and interface type (SPI, I2C, etc.). Always refer to the datasheets for detailed specifications and compatibility before making a substitution.

Features

The MX52LM04A11XVW is a low-power, high-performance SRAM (Static Random Access Memory) chip. Key features include:
1. Memory Size: 4 Megabits (512K x 8 bits) of storage, suitable for various applications.
2. Access Time: Fast access times, typically around 70 ns, enhancing system performance.
3. Low Power Consumption: Ideal for battery-operated devices, offering reduced power usage in active and standby modes.
4. Wide Operating Voltage Range: Compatible with multiple voltage levels, usually around 2.7V to 3.6V, allowing flexibility in design.
5. Asynchronous Operation: Supports easy interfacing without the need for clock signals, simplifying system design.
6. Data Retention: Maintains data integrity during power loss, making it reliable for critical applications.
7. Temperature Range: Designed to operate across a wide temperature range, ensuring stability in diverse environments.
The MX52LM04A11XVW is suitable for applications in consumer electronics, industrial devices, and telecommunications, where fast and efficient memory is crucial.

Pinout

The MX52LM04A11XVW is a 512 Mb (64 MB) NAND Flash memory chip with a pin count of 48. Its primary functions include data storage, allowing for random access to memory locations, and facilitating read and write operations. The device typically interfaces with a controller through a parallel interface, supporting standard NAND Flash operations such as page read, page write, and block erase. The chip is designed for high-density applications in consumer electronics, mobile devices, and other embedded systems requiring non-volatile storage.

Manufacturer

The MX52LM04A11XVW is manufactured by Macronix International Co., Ltd. Macronix is a Taiwanese company that specializes in the design and production of non-volatile memory solutions, including NOR Flash and NAND Flash memory products. Founded in 1989, it focuses on providing innovative memory solutions for various applications, such as consumer electronics, automotive, and industrial sectors. The company's products are widely used in devices requiring reliable and high-performance memory storage. Macronix is recognized for its commitment to quality and technological advancement in the semiconductor industry.

Application

The MX52LM04A11XVW is a low-power, high-performance 4Mb (512K x 8) SRAM designed for various application areas, including:
1. Embedded Systems: Used in microcontrollers and processors for temporary data storage and caching.
2. Telecommunications: Supports data buffering in networking equipment.
3. Consumer Electronics: Found in devices like cameras, gaming consoles, and wearables for fast data access.
4. Industrial Automation: Utilized in control systems and robotics for quick data processing.
5. Automotive Applications: Employed in safety and infotainment systems for reliable memory storage.
Its low power consumption and high speed make it suitable for these applications.

Package

The MX52LM04A11XVW is packaged in a 48-pin TSOP (Thin Small Outline Package) form factor, commonly used for memory devices, allowing for efficient space utilization on circuit boards.

Frequently Asked Questions


Q: What is the maximum clock frequency supported by this eMMC memory?
A: It supports a clock frequency of up to 200 MHz, enabling high-speed data transfers in embedded systems.


Q: Is the MX52LM04A11XVW compatible with eMMC 5.1 interface standards?
A: Yes, it uses the eMMC 5.1 memory interface, ensuring broad compatibility with modern application processors.


Q: What is the storage capacity and memory organization of this component?
A: It offers 32Gbit (4GB) capacity with 4G x 8-bit memory organization, suitable for high-density storage in portable devices.


Q: What is the operating temperature range for this NAND Flash device?
A: It operates reliably from -25°C to 85°C, making it suitable for industrial and commercial environments.


Q: Does this component support surface mount assembly?
A: Yes, it is designed for surface mount technology (SMT) in a 153-VFBGA package with 11.5x13mm LFBGA footprint.


Q: What voltage supply levels are required for operation?
A: It requires a supply voltage range of 2.7V to 3.6V, compatible with standard 3.3V power rails in embedded designs.


Q: Is the flash memory based on MLC or SLC technology?
A: It uses MLC (Multi-Level Cell) NAND flash, balancing cost and density for high-capacity storage applications.


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