NCD57080CDR2G

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NCD57080CDR2G

+БОМ

DGTL ISO 3.75KV 1CH GT DVR 8SOIC

  • ПроизводительОнсеми

  • Мфр. Часть #NCD57080CDR2G

  • Лист данных NCD57080CDR2G DataSheet

  • В наличии27268

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Part Status Active
Technology Capacitive Coupling
Number of Channels 1
Voltage - Isolation 3750Vrms
Common Mode Transient Immunity (Min) 100kV/µs
Propagation Delay tpLH / tpHL (Max) 85ns, 85ns
Rise / Fall Time (Typ) 13ns, 13ns
Current - Output High, Low 8A, 8A
Current - Peak Output 8A
Voltage - Output Supply 0V ~ 32V
Operating Temperature -40°C ~ 125°C (TA)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number NCD57080

Обзор

Description

The NCD57080CDR2G is a high-performance gate driver IC designed for driving power MOSFETs and IGBTs. It is part of the NCD5708x series and features advanced capabilities aimed at enhancing the efficiency and reliability of power electronics systems. This IC is notable for its high-speed operation, robust protection features, and compatibility with a wide range of power semiconductor devices.
Key features of the NCD57080CDR2G include a high-output current drive capability, enabling rapid switching of power transistors. It also incorporates protection mechanisms such as under-voltage lockout (UVLO) to prevent operation under insufficient voltage conditions, and thermal shutdown to protect against overheating. The IC supports both inverting and non-inverting input configurations, providing flexibility in various applications.
Typical applications for the NCD57080CDR2G include motor drives, power supplies, inverters, and other systems requiring efficient power conversion. Its compact package and robust features make it suitable for use in compact and high-density power electronics designs.

Equivalent

The NCD57080CDR2G is a dual-channel IGBT/MOSFET gate driver from ON Semiconductor. Equivalent or similar products could include:
1. Texas Instruments UCC27201A: A high-frequency N-channel MOSFET driver.
2. Infineon 2ED020I12-FI: A high-current dual-channel IGBT driver.
3. Microchip Technology MIC4606: A highly integrated half-bridge MOSFET driver.
Always verify the specifications to ensure proper compatibility with your application.

Features

The NCD57080CDR2G is a robust gate driver IC designed for high-speed switching of power MOSFETs and IGBTs. Key features include:
1. Gate Drive Voltage: It supports a wide input voltage range from 4.5 V to 30 V, enabling flexible interfacing with different power levels.
2. Output Current: The device delivers high peak output current, making it suitable for driving large gate charge transistors.
3. Protection Features: It includes built-in protection mechanisms such as under-voltage lockout (UVLO) for both high side and low side, which ensures safe operation by preventing the device from operating at insufficient voltage levels.
4. Temperature Range: The device operates reliably over a wide temperature range, typically from -40°C to +125°C.
5. Packaging: It is available in compact packages, aiding in space-constrained applications.
6. Efficiency: The driver is designed for low propagation delay and fast switching speeds, enhancing overall system efficiency.
These features make the NCD57080CDR2G an ideal choice for various applications, including motor drives, power supplies, and other high-frequency switching applications.

Pinout

The NCD57080CDR2G is a gate driver integrated circuit from ON Semiconductor. It is typically used for driving power MOSFETs and IGBTs. The device comes in an 8-pin SOIC package. The primary function of this gate driver is to facilitate the control of power transistors in high-frequency applications by providing the necessary gate drive current and voltage needed for switching operations. It ensures efficient switching by providing features like undervoltage lockout, fast propagation delay, and high current output drive capability. This makes it suitable for applications involving motor drives, power supplies, and inverters.

Manufacturer

The NCD57080CDR2G is manufactured by ON Semiconductor, a company known for providing a wide range of semiconductor solutions. ON Semiconductor specializes in the design, development, and manufacturing of various electronic components, including power and signal management, logic, discrete, and custom devices. The company serves diverse markets such as automotive, industrial, consumer electronics, communications, and computing. They focus on delivering high-performance, energy-efficient silicon solutions that help their customers meet the increasingly stringent requirements for electronic products.

Application

The NCD57080CDR2G is a high-performance isolated gate driver designed for driving SiC MOSFETs and IGBTs. Its application areas include:
1. Power Conversion Systems: Utilized in inverters, converters, and power supplies for efficient energy conversion.
2. Renewable Energy: Essential in solar inverters and wind turbine inverters due to its high efficiency and reliability.
3. Electric Vehicles (EVs): Used in EV inverters and onboard chargers for efficient motor control and charging.
4. Industrial Automation: Supports motor drives and robotics requiring precise and high-efficiency motor control.
5. Smart Grid and Energy Storage: Applied in energy storage systems and smart grid applications for improved energy management.
These applications leverage the device's fast switching, high efficiency, and robust isolation capabilities.

Package

The NCD57080CDR2G is housed in an SOIC-8 package, which is a small outline integrated circuit with 8 pins.

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