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NRVB140ESFT1G
+БОМDIODE SCHOTTKY 40V 1A SOD123FL
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ПроизводительОнсеми
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Мфр. Часть #NRVB140ESFT1G
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В наличии3431
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Active |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 560 mV @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 30 µA @ 40 V |
| Mounting Type | Surface Mount |
| Package / Case | SOD-123F |
| Supplier Device Package | SOD-123FL |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Base Product Number | NRVB140 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
Обзор
Description
The package type is typically SOD-123, which provides a compact footprint suitable for space-constrained designs. The NRVB140ESFT1G is ideal for use in various applications, including power supplies, DC-DC converters, and solar inverters. Its reliability and thermal performance make it a popular choice among engineers looking to optimize circuit efficiency and reliability. Overall, the NRVB140ESFT1G is a versatile component that helps improve the performance of electronic circuits by minimizing energy loss.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage of 40V, making it suitable for various power applications.
2. RDS(on): The device exhibits a low on-resistance (RDS(on)) of approximately 14 mΩ at a gate-source voltage of 10V, ensuring minimal power loss and high efficiency.
3. Current Capacity: It can handle a continuous drain current of up to 90A, facilitating robust performance in demanding conditions.
4. Thermal Management: The device supports high thermal performance with a maximum junction temperature of 150°C, allowing for reliable operation under high load conditions.
5. Package Type: Housed in a TO-220 package, it offers excellent thermal dissipation and easy mounting options.
6. Fast Switching: The NRVB140ESFT1G features low gate charge, enabling high-speed switching, which is beneficial for applications like DC-DC converters and motor drives.
These features make it ideal for power management and automotive applications.
Pinout
The pin configuration is as follows:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): Source terminal for the first N-channel MOSFET.
3. Drain 1 (D1): Drain terminal for the first N-channel MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): Source terminal for the second N-channel MOSFET.
6. Drain 2 (D2): Drain terminal for the second N-channel MOSFET.
The device is commonly used in applications such as power switches, load drivers, and battery management systems due to its efficiency and compact design.
Manufacturer
Founded in 1999, ON Semiconductor has grown through various acquisitions, enhancing its portfolio and expanding its market reach. The company is known for its commitment to sustainability and innovation, offering products designed to improve energy efficiency and reduce environmental impact. ON Semiconductor serves a diverse customer base and is a key player in the semiconductor industry, contributing to advancements in technology and electronics.