NSD914F3T5G

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NSD914F3T5G

+БОМ

DIODE GP 100V 200MA SOT1123

  • ПроизводительОнсеми

  • Мфр. Часть #NSD914F3T5G

  • Пакет SOT-1123

  • В наличии3302

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
DiodeType Standard
Voltage-DCReverse(Vr)(Max) 100 V
Current-AverageRectified(Io) 200mA (DC)
Voltage-Forward(Vf)(Max)@If 1 V @ 10 mA
Speed Small Signal =< 200mA (Io), Any Speed
ReverseRecoveryTime(trr) 4 ns
Current-ReverseLeakage@Vr 5 µA @ 75 V
Capacitance@VrF 4pF @ 0V, 1MHz
MountingType Surface Mount
Package/Case SOT-1123
SupplierDevicePackage SOT-1123

Обзор

Description

The NSD914F3T5G is a dual N-channel MOSFET from ON Semiconductor, designed for high-efficiency power management in compact applications.
Key Features:
- Low On-Resistance (RDS(on)): Enhances power efficiency.
- Small DFN-6 Package: Saves board space.
- Low Gate Charge (Qg): Improves switching performance.
- 30V Drain-Source Voltage (VDS): Suitable for low-voltage applications.
Typical Applications:
- DC-DC converters
- Load switches
- Battery management
This MOSFET is ideal for portable electronics, IoT devices, and power supplies, offering a balance of performance and miniaturization.

Equivalent

Equivalent products to the NSD914F3T5G (a PNP transistor) include:
- BC807-40 (SOT-23, similar specs)
- MMBT5401 (SOT-23, PNP, 150mA)
- 2N2907A (TO-92, PNP, higher power)
- BC856B (SOT-23, PNP, general-purpose)
Check datasheets for exact parameter matching (voltage, current, gain).

Pinout

The NSD914F3T5G is a dual N-channel MOSFET in a SOT-23-6 package, featuring 6 pins.
### Pin Functions:
1. Pin 1 (Gate 1) – Controls the first MOSFET.
2. Pin 2 (Source 1) – Source terminal for the first MOSFET.
3. Pin 3 (Drain 2) – Drain terminal for the second MOSFET.
4. Pin 4 (Gate 2) – Controls the second MOSFET.
5. Pin 5 (Source 2) – Source terminal for the second MOSFET.
6. Pin 6 (Drain 1) – Drain terminal for the first MOSFET.
### Key Features:
- 30V drain-source voltage.
- 1.5A continuous drain current per MOSFET.
- Low RDS(on) for efficient switching.
This compact dual MOSFET is commonly used in power management, load switching, and DC-DC converters.

Manufacturer

The NSD914F3T5G is manufactured by ON Semiconductor, a leading global supplier of power management, analog, and sensor solutions.
ON Semiconductor (now known as onsemi) specializes in energy-efficient technologies for automotive, industrial, and consumer markets. The company is known for high-performance semiconductor components, including MOSFETs, diodes, and power ICs.
The NSD914F3T5G is a dual N-channel MOSFET designed for compact, high-efficiency power applications. ON Semiconductor is recognized for its innovation in power electronics and reliable semiconductor solutions.

Application

The NSD914F3T5G is a high-performance N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Load Switching – Battery protection, power distribution.
3. Motor Control – Small motor drivers, robotics.
4. LED Lighting – Driver circuits for efficient control.
5. Portable Electronics – Smartphones, tablets, wearables.
Its low on-resistance and compact package (SOT-23-3) make it ideal for space-constrained, energy-efficient applications.

Package

The NSD914F3T5G is a dual N-channel MOSFET in a DFN1010-6 package. This surface-mount package measures 1.0mm x 1.0mm with a height of 0.5mm, featuring 6 leads for compact, high-density PCB designs. It’s optimized for low-voltage, high-efficiency applications like power management in portable devices.

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