Спецификации
| Атрибут | Ценность |
| Supplier | NTE Electronics, Inc |
| Package / Case | Bag |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector(Ic)(Max) | 500 mA |
| Voltage - Collector Emitter Breakdown(Max) | 350 V |
| Vce Saturation(Max) @ Ib Ic | 1V @ 5mA, 50mA |
| Current - Collector Cutoff(Max) | 50nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 30 @ 30mA, 10V |
| Power - Max | 625 mW |
| Frequency - Transition | 200MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
