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NTHL065N65S3F
+БОМMOSFET N-CH 650V 46A TO247-3
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ПроизводительОнсеми
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Мфр. Часть #NTHL065N65S3F
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В наличии8826
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Спецификации
| Атрибут | Ценность |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 23A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 4.6mA |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 4075 pF @ 400 V |
| Power Dissipation (Max) | 337W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Base Product Number | NTHL065 |
Обзор
Description
NTHL065N65S3F is a specific type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in various electronic applications. It features a high voltage rating, typically suitable for switching and amplification in power management systems. This device is characterized by its low on-resistance, which enhances efficiency and minimizes power loss during operation.
Key specifications often include a maximum drain-source voltage (V_DS), typically around 65V, and a continuous drain current (I_D) rating, which allows it to handle significant power loads. The NTHL065N65S3F is commonly used in applications such as power supplies, motor drivers, and inverters due to its reliable performance and thermal stability.
When selecting this MOSFET for a design, engineers consider parameters like gate threshold voltage, thermal resistance, and switching speeds. Proper heat dissipation techniques are crucial to ensure optimal performance and longevity of the device in practical applications.
Key specifications often include a maximum drain-source voltage (V_DS), typically around 65V, and a continuous drain current (I_D) rating, which allows it to handle significant power loads. The NTHL065N65S3F is commonly used in applications such as power supplies, motor drivers, and inverters due to its reliable performance and thermal stability.
When selecting this MOSFET for a design, engineers consider parameters like gate threshold voltage, thermal resistance, and switching speeds. Proper heat dissipation techniques are crucial to ensure optimal performance and longevity of the device in practical applications.
Equivalent
The NTHL065N65S3F is a N-channel MOSFET, and its equivalent products include the STP65NF06, IRF3205, and AO3400. These alternatives may vary in specifications, so it's essential to verify parameters such as Rds(on), Vds, and maximum current ratings to ensure compatibility for your specific application.
Features
The NTHL065N65S3F is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 650V.
2. Current Rating: Continuous drain current (I_D) of 65A, enabling it to handle substantial loads.
3. R_DS(on): Low on-resistance (R_DS(on)), typically around 0.065 ohms, which minimizes conduction losses.
4. Gate Charge: Low gate charge (Q_g) for faster switching speeds, enhancing overall efficiency in power conversion.
5. Package: Available in TO-220 and TO-247 packages, facilitating easy heat dissipation.
6. Temperature Range: Suitable for high-temperature environments, with a maximum junction temperature of 150°C.
7. Applications: Commonly used in power supplies, motor control, and inverter systems.
These features make the NTHL065N65S3F a robust choice for applications requiring reliable and efficient power management.
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 650V.
2. Current Rating: Continuous drain current (I_D) of 65A, enabling it to handle substantial loads.
3. R_DS(on): Low on-resistance (R_DS(on)), typically around 0.065 ohms, which minimizes conduction losses.
4. Gate Charge: Low gate charge (Q_g) for faster switching speeds, enhancing overall efficiency in power conversion.
5. Package: Available in TO-220 and TO-247 packages, facilitating easy heat dissipation.
6. Temperature Range: Suitable for high-temperature environments, with a maximum junction temperature of 150°C.
7. Applications: Commonly used in power supplies, motor control, and inverter systems.
These features make the NTHL065N65S3F a robust choice for applications requiring reliable and efficient power management.
Pinout
The NTHL065N65S3F is a power MOSFET with a total of 8 pins. Here’s a brief overview of its pin configuration and functions:
1. Gate (G): Pin for controlling the MOSFET; the voltage applied here turns the device on or off.
2. Drain (D): Pin through which the load current flows when the device is on; connected to the load in circuit applications.
3. Source (S): Pin that serves as the return path for the current; connected to the ground or power supply depending on the configuration.
4. Body Diode: Implicit connection between Drain and Source facilitates current flow in the reverse direction, providing protection in certain applications.
This device is typically used in power management applications, such as DC-DC converters and motor drivers, due to its high efficiency and low on-resistance characteristics. Always refer to the specific datasheet for detailed electrical characteristics and applications.
1. Gate (G): Pin for controlling the MOSFET; the voltage applied here turns the device on or off.
2. Drain (D): Pin through which the load current flows when the device is on; connected to the load in circuit applications.
3. Source (S): Pin that serves as the return path for the current; connected to the ground or power supply depending on the configuration.
4. Body Diode: Implicit connection between Drain and Source facilitates current flow in the reverse direction, providing protection in certain applications.
This device is typically used in power management applications, such as DC-DC converters and motor drivers, due to its high efficiency and low on-resistance characteristics. Always refer to the specific datasheet for detailed electrical characteristics and applications.
Manufacturer
The NTHL065N65S3F is manufactured by Nexperia, a company that specializes in the production of discrete, logic, and MOSFET semiconductors. Nexperia was formed as a spin-off from NXP Semiconductors in 2017 and operates as an independent manufacturer. The company focuses on providing high-quality semiconductor solutions for a variety of applications, including automotive, industrial, and consumer electronics. Nexperia is known for its commitment to efficiency, reliability, and high-performance components, offering a wide range of products that serve various electronic markets.
Application
The NTHL065N65S3F is an N-channel MOSFET typically used in power applications. Its main application areas include:
1. Switching Power Supplies: Used for efficient power conversion in various electronic devices.
2. Motor Control: Employed in driving DC and brushless motors in industrial and consumer applications.
3. DC-DC Converters: Ideal for step-down (buck) and step-up (boost) converters in power management systems.
4. Inverters: Utilized in renewable energy systems, such as solar inverters.
5. Lighting Applications: Used in LED drivers for efficient light control.
These applications leverage its low on-resistance and high-speed switching capabilities.
1. Switching Power Supplies: Used for efficient power conversion in various electronic devices.
2. Motor Control: Employed in driving DC and brushless motors in industrial and consumer applications.
3. DC-DC Converters: Ideal for step-down (buck) and step-up (boost) converters in power management systems.
4. Inverters: Utilized in renewable energy systems, such as solar inverters.
5. Lighting Applications: Used in LED drivers for efficient light control.
These applications leverage its low on-resistance and high-speed switching capabilities.
Package
The NTHL065N65S3F is typically packaged in a TO-220 or DPAK configuration. These packages provide efficient thermal management and are suitable for high-power applications.
