Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 9.7A (Ta), 48A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 6mOhm @ 30A, 10V |
| Vgs(th)(Max) @ Id | 2.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 10.8 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1264 pF @ 15 V |
| Power Dissipation (Max) | 920mW (Ta), 23.2W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Обзор
Description
The NTMFS4955NT1G is an N-channel MOSFET from ON Semiconductor, designed for high-efficiency power management applications. Key features include:
- Low On-Resistance (RDS(on)): 9.3 mΩ (max) at VGS = 10 V, reducing conduction losses.
- High Current Handling: Up to 30 A continuous drain current (ID).
- Fast Switching: Optimized for high-frequency applications like DC-DC converters, motor control, and load switching.
- Low Gate Charge (Qg): Enhances efficiency in switching circuits.
- Compact Package: DFN5 (5x6 mm), suitable for space-constrained designs.
Ideal for automotive, industrial, and consumer electronics, it operates with a gate-source voltage (VGS) range of ±20 V and a drain-source voltage (VDS) of 30 V. Its robust thermal performance and low power dissipation make it a reliable choice for demanding applications.
For detailed specs, refer to the datasheet.
- Low On-Resistance (RDS(on)): 9.3 mΩ (max) at VGS = 10 V, reducing conduction losses.
- High Current Handling: Up to 30 A continuous drain current (ID).
- Fast Switching: Optimized for high-frequency applications like DC-DC converters, motor control, and load switching.
- Low Gate Charge (Qg): Enhances efficiency in switching circuits.
- Compact Package: DFN5 (5x6 mm), suitable for space-constrained designs.
Ideal for automotive, industrial, and consumer electronics, it operates with a gate-source voltage (VGS) range of ±20 V and a drain-source voltage (VDS) of 30 V. Its robust thermal performance and low power dissipation make it a reliable choice for demanding applications.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the NTMFS4955NT1G (30V, 8.5mΩ MOSFET) include:
- AON7400 (30V, 8.5mΩ)
- CSD17313Q5A (30V, 8.5mΩ)
- SI7147DP-T1-GE3 (30V, 8.0mΩ)
- IRLHM630 (30V, 6.5mΩ)
Check datasheets for exact compatibility in your application.
- AON7400 (30V, 8.5mΩ)
- CSD17313Q5A (30V, 8.5mΩ)
- SI7147DP-T1-GE3 (30V, 8.0mΩ)
- IRLHM630 (30V, 6.5mΩ)
Check datasheets for exact compatibility in your application.
Features
The NTMFS4955NT1G is a 30V N-channel MOSFET with the following key features:
- Low On-Resistance (RDS(on)): 3.8 mΩ (max) @ VGS = 10V, 4.5 mΩ @ VGS = 4.5V
- High Current Handling: 60A continuous (ID)
- Fast Switching: Optimized for high-efficiency power applications
- Low Gate Charge (Qg): 38 nC (typ) for reduced switching losses
- AEC-Q101 Qualified: Suitable for automotive applications
- PowerPAK® SO-8 Package: Compact, thermally efficient design
- Logic-Level Gate Drive: Fully enhanced at 4.5V (VGS)
Ideal for DC-DC converters, motor control, and power management in automotive and industrial systems.
- Low On-Resistance (RDS(on)): 3.8 mΩ (max) @ VGS = 10V, 4.5 mΩ @ VGS = 4.5V
- High Current Handling: 60A continuous (ID)
- Fast Switching: Optimized for high-efficiency power applications
- Low Gate Charge (Qg): 38 nC (typ) for reduced switching losses
- AEC-Q101 Qualified: Suitable for automotive applications
- PowerPAK® SO-8 Package: Compact, thermally efficient design
- Logic-Level Gate Drive: Fully enhanced at 4.5V (VGS)
Ideal for DC-DC converters, motor control, and power management in automotive and industrial systems.
Application
The NTMFS4955NT1G is a power MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulation.
2. Automotive Systems – LED drivers, motor control, battery management.
3. Consumer Electronics – Power supplies, load switches.
4. Industrial Applications – Switching circuits, power distribution.
Its low on-resistance (RDS(on)) and high efficiency make it suitable for high-current, fast-switching applications.
1. Power Management – DC-DC converters, voltage regulation.
2. Automotive Systems – LED drivers, motor control, battery management.
3. Consumer Electronics – Power supplies, load switches.
4. Industrial Applications – Switching circuits, power distribution.
Its low on-resistance (RDS(on)) and high efficiency make it suitable for high-current, fast-switching applications.
Package
The NTMFS4955NT1G is a PowerTrench MOSFET housed in a DFN5 (5-Pin Dual Flat No-Lead) package. It measures 2.5mm x 2.0mm with a low profile (0.8mm height), offering efficient thermal performance and space-saving design for high-density applications.
