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NTZS3151PT1G
+БОМMOSFET P-CH 20V 860MA SOT563
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ПроизводительОнсеми
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Мфр. Часть #NTZS3151PT1G
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Лист данных NTZS3151PT1G DataSheet
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В наличии21118
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 860mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 150mOhm @ 950mA, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 5.6 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 458 pF @ 16 V |
| Power Dissipation (Max) | 170mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-563 |
Обзор
Description
The NTZS3151PT1G is a N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for applications requiring high-speed switching and low on-resistance. This MOSFET is suitable for low-voltage applications, given its compact SOT-23 package which offers space-saving benefits for circuit designers. It features a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of approximately 2.1A. The low gate threshold voltage permits efficient operation at lower voltages, making it ideal for battery-powered devices and portable electronics. The NTZS3151PT1G also showcases excellent thermal performance and fast switching capabilities, contributing to higher efficiency in power-sensitive applications. Its robust design ensures reliability and durability in various operational environments. This component is often used in DC-DC converters, load switches, and level-shifting applications. As with most MOSFETs, it’s important to consider proper handling and design practices to prevent static damage and ensure optimal performance.
Equivalent
The NTZS3151PT1G is a MOSFET transistor. Its equivalents are typically other MOSFETs with similar specifications, such as voltage, current, and package type. Equivalent products may include:
1. BSS138
2. 2N7002
3. PMV20XN
It's important to compare specific electrical characteristics and package details to ensure compatibility. Always refer to the datasheets for confirmation.
1. BSS138
2. 2N7002
3. PMV20XN
It's important to compare specific electrical characteristics and package details to ensure compatibility. Always refer to the datasheets for confirmation.
Features
The NTZS3151PT1G is a N-channel MOSFET designed for use in various electronic applications. Here are its key features:
1. Type: N-channel MOSFET
2. Voltage Rating: It typically supports a drain-source voltage (V_ds) of up to 30V.
3. Current Rating: The MOSFET can handle a continuous drain current (I_d) of up to 1.0A.
4. R_DS(on): The on-resistance is relatively low, usually around 1.2Ω at V_gs = 10V, which minimizes power loss and enhances efficiency.
5. Package: It is available in a compact SOT-23 package, which is suitable for space-constrained applications.
6. Gate Threshold Voltage: The threshold voltage is around 1V, ensuring operation with logic-level signals.
7. Applications: It is ideal for use in load switching, power management, and DC-DC conversion circuits.
These features make the NTZS3151PT1G a versatile choice for applications requiring efficient and reliable switching in small form-factor designs.
1. Type: N-channel MOSFET
2. Voltage Rating: It typically supports a drain-source voltage (V_ds) of up to 30V.
3. Current Rating: The MOSFET can handle a continuous drain current (I_d) of up to 1.0A.
4. R_DS(on): The on-resistance is relatively low, usually around 1.2Ω at V_gs = 10V, which minimizes power loss and enhances efficiency.
5. Package: It is available in a compact SOT-23 package, which is suitable for space-constrained applications.
6. Gate Threshold Voltage: The threshold voltage is around 1V, ensuring operation with logic-level signals.
7. Applications: It is ideal for use in load switching, power management, and DC-DC conversion circuits.
These features make the NTZS3151PT1G a versatile choice for applications requiring efficient and reliable switching in small form-factor designs.
Pinout
The NTZS3151PT1G is a transistor from ON Semiconductor. It is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various switching applications. This device comes in a small, surface-mount package known as the SOT-23-3.
The pin count for the NTZS3151PT1G is 3, which are typically configured as:
1. Gate (G): The control pin that modulates the conductivity between the drain and source.
2. Source (S): The terminal through which the current enters the transistor.
3. Drain (D): The terminal through which the current exits the transistor.
The NTZS3151PT1G is often utilized in applications such as load switching and power management due to its efficiency and compact size.
The pin count for the NTZS3151PT1G is 3, which are typically configured as:
1. Gate (G): The control pin that modulates the conductivity between the drain and source.
2. Source (S): The terminal through which the current enters the transistor.
3. Drain (D): The terminal through which the current exits the transistor.
The NTZS3151PT1G is often utilized in applications such as load switching and power management due to its efficiency and compact size.
Manufacturer
The NTZS3151PT1G is manufactured by ON Semiconductor, now known as onsemi. onsemi is a semiconductor company that focuses on intelligent technology solutions. They design and produce a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices for various applications. These applications span across automotive, industrial, communications, computing, consumer electronics, and more. The company aims to enable energy-efficient innovations, which align with global trends towards sustainability and smart technology.
Application
The NTZS3151PT1G is a MOSFET transistor used primarily for switching and amplification applications. Its application areas include:
1. Power Management: Used in DC-DC converters and voltage regulation circuits for efficient power management in electronic devices.
2. Automotive Systems: Utilized in motor control circuits and other automotive electronic systems.
3. Consumer Electronics: Found in devices like smartphones, tablets, and laptops for battery management and load switching.
4. Industrial Equipment: Employed in industrial automation and control systems for effective power switching.
5. Lighting Systems: Used in LED drivers and lighting control applications.
Its small size and efficient performance make it suitable for compact and high-density circuit designs.
1. Power Management: Used in DC-DC converters and voltage regulation circuits for efficient power management in electronic devices.
2. Automotive Systems: Utilized in motor control circuits and other automotive electronic systems.
3. Consumer Electronics: Found in devices like smartphones, tablets, and laptops for battery management and load switching.
4. Industrial Equipment: Employed in industrial automation and control systems for effective power switching.
5. Lighting Systems: Used in LED drivers and lighting control applications.
Its small size and efficient performance make it suitable for compact and high-density circuit designs.
Package
The NTZS3151PT1G is packaged in a SOT-223 configuration. This type of package is commonly used for surface-mount technology in electronic components, providing a compact form factor for efficient thermal performance and reliable mounting on printed circuit boards.
