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NVB190N65S3F
+БОМMOSFET N-CH 650V 20A D2PAK-3
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ПроизводительОнсеми
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Мфр. Часть #NVB190N65S3F
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Лист данных NVB190N65S3F DataSheet
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В наличии11825
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q101, SuperFET® III |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 20A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 190mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 430µA |
| Gate Charge(Qg)(Max) @ Vgs | 34 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 1605 pF @ 400 V |
| Power Dissipation (Max) | 162W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK-3 (TO-263-3) |
Обзор
Description
The NVB190N65S3F is a high-performance N-channel MOSFET designed for various applications requiring efficient power management and switching. Manufactured by ON Semiconductor, this device is part of their SuperFET III series, known for low on-resistance and fast switching capabilities. It features a drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 190A, making it suitable for high-power applications.
Key attributes of the NVB190N65S3F include a low gate charge, which enhances its efficiency by reducing the energy required to switch the device on and off. It also has a minimized gate-to-drain charge, improving its performance in high-frequency applications. The MOSFET is designed to operate with a wide range of gate-source voltages, providing flexibility in various circuits.
Typical applications for the NVB190N65S3F include power supplies, inverters, motor drives, and other systems where high efficiency and reliable performance are critical. Its robust design also ensures durability under demanding conditions, contributing to the overall reliability of the end-product.
Key attributes of the NVB190N65S3F include a low gate charge, which enhances its efficiency by reducing the energy required to switch the device on and off. It also has a minimized gate-to-drain charge, improving its performance in high-frequency applications. The MOSFET is designed to operate with a wide range of gate-source voltages, providing flexibility in various circuits.
Typical applications for the NVB190N65S3F include power supplies, inverters, motor drives, and other systems where high efficiency and reliable performance are critical. Its robust design also ensures durability under demanding conditions, contributing to the overall reliability of the end-product.
Equivalent
The NVB190N65S3F is an N-channel MOSFET produced by onsemi. Equivalent products could include:
1. Infineon's IPW65R045CFD - Similar voltage and current ratings.
2. Vishay's SiHG65N60E - Comparable specifications in terms of voltage, current, and switching performance.
3. STMicroelectronics' STW65N60DM2 - Another alternative with similar features.
It is important to compare specific parameters like on-resistance, gate charge, and thermal characteristics to ensure compatibility with your application. Always consult datasheets for precise matching.
1. Infineon's IPW65R045CFD - Similar voltage and current ratings.
2. Vishay's SiHG65N60E - Comparable specifications in terms of voltage, current, and switching performance.
3. STMicroelectronics' STW65N60DM2 - Another alternative with similar features.
It is important to compare specific parameters like on-resistance, gate charge, and thermal characteristics to ensure compatibility with your application. Always consult datasheets for precise matching.
Features
The NVB190N65S3F is a power MOSFET known for its high efficiency and robust performance in power conversion and management applications. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) capacity of approximately 190A. The device is part of the SuperFET III series, which is designed to deliver superior switching performance and lower on-resistance, contributing to reduced power losses and improved thermal management. This MOSFET is commonly used in high-power applications like power supplies, inverters, and motor drives due to its ability to handle high voltages and currents efficiently. Additionally, it comes in a TO-247 package, providing a compact and reliable form factor for mounting on PCBs. Its advanced design allows for fast switching speeds and improved efficiency in energy conversion systems.
Pinout
The NVB190N65S3F is a power MOSFET made by ON Semiconductor. It typically comes in a TO-247 package, which has a 3-pin configuration. The three pins are:
1. Gate (G): This pin is used to control the MOSFET's operation by applying a voltage. The gate voltage determines whether the MOSFET is on or off.
2. Drain (D): This pin is where the main current flows out of the MOSFET when it is in the 'on' state. It is connected to the load in most applications.
3. Source (S): This pin is where the main current flows into the MOSFET. It is typically connected to the ground or power source reference.
The NVB190N65S3F is designed for high-efficiency power switching applications and features low on-resistance and fast switching speed. It is primarily used in high-power applications such as power supplies, motor controllers, and inverters.
1. Gate (G): This pin is used to control the MOSFET's operation by applying a voltage. The gate voltage determines whether the MOSFET is on or off.
2. Drain (D): This pin is where the main current flows out of the MOSFET when it is in the 'on' state. It is connected to the load in most applications.
3. Source (S): This pin is where the main current flows into the MOSFET. It is typically connected to the ground or power source reference.
The NVB190N65S3F is designed for high-efficiency power switching applications and features low on-resistance and fast switching speed. It is primarily used in high-power applications such as power supplies, motor controllers, and inverters.
Manufacturer
The NVB190N65S3F is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a leading supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy-efficient power management, analog, sensors, logic, timing, connectivity, discrete, SoC, and custom devices. The company primarily focuses on automotive, industrial, cloud power, and IoT sectors, providing essential components for electronic systems and helping drive innovation across these industries.
Application
The NVB190N65S3F is a power MOSFET, primarily used in applications that require efficient power conversion and management. Key application areas include:
1. Switching Power Supplies: Used for converting electrical power efficiently in various electronic devices.
2. Motor Drives: Useful in controlling the speed and torque of motors in industrial and consumer applications.
3. Battery Management Systems: Assists in charging and discharging control for extended battery life.
4. Inverters: Employed in converting DC to AC power, especially in renewable energy systems.
5. Electric Vehicles: Integrated into powertrain systems for efficient energy use and management.
These applications benefit from the MOSFET's low on-resistance and high current handling capabilities.
1. Switching Power Supplies: Used for converting electrical power efficiently in various electronic devices.
2. Motor Drives: Useful in controlling the speed and torque of motors in industrial and consumer applications.
3. Battery Management Systems: Assists in charging and discharging control for extended battery life.
4. Inverters: Employed in converting DC to AC power, especially in renewable energy systems.
5. Electric Vehicles: Integrated into powertrain systems for efficient energy use and management.
These applications benefit from the MOSFET's low on-resistance and high current handling capabilities.
Package
The NVB190N65S3F is typically available in a TO-247 package. This package type is used for high-power semiconductor devices and provides efficient heat dissipation and a compact design suitable for various applications.
