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NVS4001NT1G
+БОМMOSFET N-CH 30V 270MA SC70-3
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ПроизводительОнсеми
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Мфр. Часть #NVS4001NT1G
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Лист данных NVS4001NT1G DataSheet
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В наличии25538
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 270mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4V |
| Rds On(Max) @ Id Vgs | 1.5Ohm @ 10mA, 4V |
| Vgs(th)(Max) @ Id | 1.5V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 1.3 nC @ 5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 33 pF @ 5 V |
| Power Dissipation (Max) | 330mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-70-3 (SOT323) |
Обзор
Description
Key features include low dropout voltage, allowing it to maintain regulation even with minimal differences between input and output voltages, enhancing energy efficiency. The NVS4001NT1G also offers protection features like overcurrent and thermal shutdown, ensuring reliability and safety under different operating conditions.
In terms of packaging, it is typically available in compact, surface-mount forms that facilitate easy integration into modern electronic circuit designs. The device's small size, coupled with its robust performance, makes it a preferred choice for applications demanding space and power efficiency. Overall, the NVS4001NT1G is a versatile solution for delivering consistent power in compact electronic devices.
Equivalent
1. Littelfuse SP0502BAHTG
2. Vishay VESD05A1-02V-GS08
3. Bourns CDSOD323-T05SC
4. Diodes Incorporated D5V0L1B2T-7
5. Infineon ESD5V3U1U-03LRH
When selecting an equivalent, ensure that the electrical characteristics match your specific application requirements. Always verify the datasheets for compatibility in terms of breakdown voltage, clamping voltage, and package size.
Features
1. N-Channel MOSFET: It is an N-channel device, which generally offers faster switching speeds and higher efficiency in certain applications compared to P-channel MOSFETs.
2. Voltage and Current Ratings: It typically features a high voltage and current handling capability, suitable for various power management tasks.
3. Low On-Resistance: The device is designed to have low on-resistance, minimizing power loss and improving efficiency.
4. Enhanced Thermal Performance: Often equipped with a package that enhances heat dissipation, allowing the device to operate reliably at high temperatures.
5. Fast Switching: It supports rapid switching, which is ideal for applications requiring quick response times, such as DC-DC converters and load switching.
6. Compact Package: The device typically comes in a compact package, making it suitable for space-constrained applications.
These features make the NVS4001NT1G a versatile choice for various power management and electronic switching applications.
Pinout
1. Pin 1 (Anode 1): Connected to the anode of the first diode.
2. Pin 2 (Anode 2): Connected to the anode of the second diode.
3. Pin 3 (Cathode): Common cathode for both diodes.
This configuration allows the component to function effectively in various applications requiring diode protection or rectification, especially in high-speed switching circuits due to the Schottky diode's low forward voltage drop and fast switching capabilities.