Спецификации
| Атрибут | Ценность |
| Supplier | PN Junction Semiconductor |
| Package / Case | Tray |
| Part Status | Active |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain(Id) @ 25°C | 350A |
| Rds On(Max) @ Id Vgs | 7.3mOhm @ 300A, 20V |
| Vgs(th)(Max) @ Id | 5V @ 100mA |
| Input Capacitance(Ciss)(Max) @ Vds | 29.5pF @ 1000V |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |