Спецификации
| Атрибут | Ценность |
| Supplier | PN Junction Semiconductor |
| Package | Tray |
| ProductStatus | Active |
| FETType | 2 N-Channel (Half Bridge) |
| FETFeature | Silicon Carbide (SiC) |
| DraintoSourceVoltage(Vdss) | 1200V (1.2kV) |
| Current-ContinuousDrain(Id)@25°C | 350A |
| RdsOn(Max)@IdVgs | 7.3mOhm @ 300A, 20V |
| Vgs(th)(Max)@Id | 5V @ 100mA |
| InputCapacitance(Ciss)(Max)@Vds | 29.5pF @ 1000V |
| OperatingTemperature | -40°C ~ 175°C (TJ) |
| MountingType | Chassis Mount |
| Package/Case | Module |
