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S29GL064N90TFI030
+БОМIC FLASH 64MBIT PARALLEL 48TSOP
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Производителькорпорации Cypress Semiconductor Corp
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Мфр. Часть #S29GL064N90TFI030
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Лист данных S29GL064N90TFI030 DataSheet
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Пакет TSOP-48
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В наличии7227
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package / Case | Tray,Tray |
| Series | GL-N |
| Part Status | Discontinued at Digi-Key |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 64Mb (8M x 8, 4M x 16) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 90ns |
| Access Time | 90 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Обзор
Description
The S29GL064N90TFI030 is used in various applications requiring reliable non-volatile memory, like embedded systems, consumer electronics, and telecommunications. It features sector erase architecture, allowing individual sectors to be erased and programmed, supporting flexibility in data management. Advanced write protection features are also included to ensure data integrity and security. The device is compatible with 3.0-volt microprocessors and supports fast read and program operations, making it suitable for systems demanding high-speed memory solutions.
Equivalent
1. Micron: MT28EW064ABA
2. Winbond: W29GL064
3. Macronix: MX29GL064E
These alternatives offer similar functionality and are designed for parallel NOR Flash memory applications. Always check for compatibility regarding pin configuration, voltage, and performance specifications before substitution.
Features
1. Architecture: NOR Flash technology, which provides fast read times and random access capabilities.
2. Density: 64 Mb or 8 MB (megabytes) of storage capacity.
3. Interface: Parallel interface for high-speed data throughput.
4. Access Time: 90 ns (nanoseconds) typical access time for fast data retrieval.
5. Voltage: Operates at a 3.0V supply, suited for typical embedded applications.
6. Temperature Range: Industrial-grade, with an operating temperature range from -40°C to +85°C.
7. Package: Available in TSOP (Thin Small Outline Package) for compact and space-efficient design.
8. Endurance: Typically supports 100,000 program/erase cycles.
9. Data Retention: Offers data retention of 20 years, ensuring long-term data storage reliability.
10. Security: Includes security features like lock registers for data protection.
These attributes make it suitable for use in embedded systems, automotive applications, and various electronics where reliable, non-volatile memory is needed.
Pinout
- Address Pins (A0-A22): Used for address inputs to select specific memory locations.
- Data Pins (DQ0-DQ15): Used for data input/output.
- Chip Enable (CE#): Activates the chip.
- Output Enable (OE#): Enables the device's output buffers.
- Write Enable (WE#): Controls writing to the memory.
- Reset (RESET#): Resets the device.
- Ready/Busy (RY/BY#): Indicates the status of the device.
- Write Protect (WP#): Protects the memory from writes.
- BYTE#: Selects byte or word mode operation.
- VCC: Power supply.
- VSS: Ground.
These functions support standard operations such as read, program, and erase, making the S29GL064N90TFI030 suitable for a variety of applications requiring non-volatile memory.
Manufacturer
Application
1. Embedded Systems: Used in microcontrollers and other embedded devices for code storage and execution.
2. Automotive: Provides firmware storage in automotive electronics like infotainment systems and engine control units (ECUs).
3. Networking Equipment: Utilized in routers, switches, and modems for firmware and configuration data.
4. Industrial Control: Supports applications in automation and control systems requiring robust data retention.
5. Consumer Electronics: Found in devices like televisions and set-top boxes to store software and user settings.
Its reliability and fast read speeds make it suitable for critical applications across these sectors.