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SI2306BDS-T1-E3
+БОМMOSFET N-CH 30V 3.16A SOT23-3
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ПроизводительVishay Силиконикс
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Мфр. Часть #SI2306BDS-T1-E3
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В наличии6135
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 3.16A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 3.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 305 pF @ 15 V |
| Power Dissipation (Max) | 750mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | SI2306 |
Обзор
Description
The SI2306BDS-T1-E3 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for low-voltage applications. It features a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) rating of up to 30A, making it suitable for various switching and amplification tasks. This MOSFET is characterized by its low on-resistance (Rds(on)), which enhances efficiency and reduces heat generation during operation. It is commonly used in power management, automotive applications, and DC-DC converters.
The device is packaged in a SOT-23 form factor, which allows for space-efficient designs in compact electronic circuits. Its thermal resistance profile supports effective heat dissipation. Overall, the SI2306BDS-T1-E3 is a reliable choice for engineers looking for robust performance in power electronic applications.
The device is packaged in a SOT-23 form factor, which allows for space-efficient designs in compact electronic circuits. Its thermal resistance profile supports effective heat dissipation. Overall, the SI2306BDS-T1-E3 is a reliable choice for engineers looking for robust performance in power electronic applications.
Equivalent
The SI2306BDS-T1-E3 is an N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and SI2307. Additionally, you can consider alternatives like the IRLML2502 or AO3400, depending on specific requirements such as voltage ratings, current capacity, and package type. Always verify specifications to ensure compatibility with your application.
Features
The SI2306BDS-T1-E3 is an N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Ratings: It has a maximum drain-source voltage (V_DS) of 60V, allowing it to handle significant voltage levels.
2. Current Handling: The maximum continuous drain current (I_D) is typically around 6.2A, making it suitable for medium power applications.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)) of about 0.045Ω at V_GS = 10V, enhancing efficiency by minimizing power loss.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for lower drive voltages in various circuits.
5. Package Type: Available in a compact DPAK package, facilitating efficient thermal management and PCB layout.
6. Fast Switching: It is optimized for fast switching applications, suitable for DC-DC converters and motor drives.
Overall, the SI2306BDS-T1-E3 combines high performance with versatility for modern electronic designs.
1. Voltage Ratings: It has a maximum drain-source voltage (V_DS) of 60V, allowing it to handle significant voltage levels.
2. Current Handling: The maximum continuous drain current (I_D) is typically around 6.2A, making it suitable for medium power applications.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)) of about 0.045Ω at V_GS = 10V, enhancing efficiency by minimizing power loss.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for lower drive voltages in various circuits.
5. Package Type: Available in a compact DPAK package, facilitating efficient thermal management and PCB layout.
6. Fast Switching: It is optimized for fast switching applications, suitable for DC-DC converters and motor drives.
Overall, the SI2306BDS-T1-E3 combines high performance with versatility for modern electronic designs.
Pinout
The SI2306BDS-T1-E3 is an N-channel MOSFET with a total of 8 pins. Its primary functions include acting as a low-side switch in various applications, such as power management, load switching, and DC-DC converters.
The pinout is as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - Connects to the load and allows current to flow to the source when the MOSFET is on.
3. Source (S) - Connects to ground or the negative side of the power supply.
The remaining pins are part of the package configuration, which helps with thermal management and PCB layout. The SI2306BDS-T1-E3 features a low R_DS(on), making it efficient for power applications.
The pinout is as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - Connects to the load and allows current to flow to the source when the MOSFET is on.
3. Source (S) - Connects to ground or the negative side of the power supply.
The remaining pins are part of the package configuration, which helps with thermal management and PCB layout. The SI2306BDS-T1-E3 features a low R_DS(on), making it efficient for power applications.
Manufacturer
The SI2306BDS-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company provides a wide range of products including resistors, capacitors, inductors, diodes, and transistors, which are used in various applications across different industries such as automotive, industrial, consumer electronics, and telecommunications.
Vishay is known for its extensive portfolio of semiconductor solutions, including MOSFETs and other power management devices, which are integral in energy-efficient designs for electronic systems. The SI2306BDS-T1-E3 is a specific N-channel MOSFET that is used in applications requiring efficient switching and amplification. Vishay focuses on innovation and quality, positioning itself as a leader in the electronics components market.
In summary, Vishay Intertechnology is a prominent player in the electronics manufacturing industry, specializing in a wide array of components that support various technological applications.
Vishay is known for its extensive portfolio of semiconductor solutions, including MOSFETs and other power management devices, which are integral in energy-efficient designs for electronic systems. The SI2306BDS-T1-E3 is a specific N-channel MOSFET that is used in applications requiring efficient switching and amplification. Vishay focuses on innovation and quality, positioning itself as a leader in the electronics components market.
In summary, Vishay Intertechnology is a prominent player in the electronics manufacturing industry, specializing in a wide array of components that support various technological applications.
Application
The SI2306BDS-T1-E3 is a N-channel MOSFET commonly used in various applications, including:
1. Power Management: As a switch in power supplies and voltage regulation circuits.
2. Motor Control: In driving DC and stepper motors for robotics and automation.
3. Battery Management: For load switching and protection in battery-powered devices.
4. LED Drivers: As a switching element in LED lighting applications.
5. Audio Amplification: In amplifier circuits for audio devices.
6. Consumer Electronics: In devices like smartphones, tablets, and computers for power efficiency.
Its low ON-resistance and fast switching capabilities make it suitable for these applications.
1. Power Management: As a switch in power supplies and voltage regulation circuits.
2. Motor Control: In driving DC and stepper motors for robotics and automation.
3. Battery Management: For load switching and protection in battery-powered devices.
4. LED Drivers: As a switching element in LED lighting applications.
5. Audio Amplification: In amplifier circuits for audio devices.
6. Consumer Electronics: In devices like smartphones, tablets, and computers for power efficiency.
Its low ON-resistance and fast switching capabilities make it suitable for these applications.
Package
The SI2306BDS-T1-E3 is packaged in a SOT-23 surface mount package. This compact form factor is commonly used in applications requiring space-efficient components.
