SI3900DV

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SI3900DV

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  • Мфр. Часть #SI3900DV

  • Лист данных SI3900DV DataSheet

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Спецификации

Атрибут Ценность
Manufacturer TECH PUBLIC
Package / Case SOT-23-6
Operating Temperature -55℃~+150℃
Current - Continuous Drain(Id) 4A
Pd - Power Dissipation 1.25W
Drain to Source Voltage (Vdss) 20V
Rds(on) 45mΩ@2.5V,3.7A
Gate Threshold Voltage (Vgs(th) @ Id) 1.2V
Type 2 N-Channel
Gate Charge(Qg) [email protected]
Input Capacitance(Ciss @ Vds) 513pF@10V
Reverse Transfer Capacitance (Crss @ Vds) 60pF@10V

Обзор

Description

The SI3900DV is a dual N-channel MOSFET designed for low-voltage, high-efficiency switching applications. Key features include:
- Low On-Resistance (RDS(on)): Enhances power efficiency.
- Small Form Factor: Ideal for space-constrained designs (e.g., SOT-23-6 package).
- Fast Switching: Suitable for high-frequency circuits.
- Low Gate Drive Voltage (VGS): Compatible with 2.5V–5V logic levels.
Common uses include power management, load switching, DC-DC converters, and battery protection. Its dual-MOSFET configuration allows for compact circuit designs, reducing component count.
For detailed specs, refer to the datasheet (e.g., Vishay’s documentation).

Equivalent

The SI3900DV is a P-channel MOSFET. Equivalent alternatives include:
- AO3401 (30V, -4A, SOT-23)
- IRLML6401 (-12V, -4.3A, SOT-23)
- DMG2305UX (-20V, -4.2A, SOT-23)
- BSS84 (-50V, -0.13A, SOT-23, lower current)
Check voltage/current ratings and package compatibility for your application.

Features

The SI3900DV is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V (Drain-to-Source, VDS)
- Current Rating: -5.8A (Continuous Drain Current, ID)
- Low On-Resistance: 50mΩ (max) at VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Fast Switching: Low gate charge (Qg) for efficient performance
- Power Dissipation: 2.5W (max)
- Package: SOT-23 (Compact surface-mount)
- Applications: Load switching, power management, battery protection
Ideal for portable electronics, power distribution, and low-voltage systems due to its efficiency and small form factor.

Application

The SI3900DV is a P-channel MOSFET commonly used in:
1. Power Management – Switching and load control in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in voltage regulators.
4. Motor Control – Driving small motors in consumer electronics.
5. Load Switching – On/off control in circuits (e.g., USB power switches).
Its low on-resistance (RDS(on)) and compact package (e.g., SOT-23) make it ideal for space-constrained, low-voltage (<20V) applications.

Продукты, связанные с SI3900DV

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