Изображения являются только для ссылки
SI7463ADP-T1-GE3
+БОМMOSFET P-CH 40V 46A PPAK SO-8
-
ПроизводительVishay Силиконикс
-
Мфр. Часть #SI7463ADP-T1-GE3
-
В наличии8857
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 144 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4150 pF @ 20 V |
| Power Dissipation (Max) | 5W (Ta), 39W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Base Product Number | SI7463 |
Обзор
Description
The SI7463ADP-T1-GE3 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for efficient power management in various applications. It features low on-resistance and high-speed switching capabilities, making it suitable for use in power supplies, DC-DC converters, and motor control systems.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of up to 62A, and a low R_DS(on) value, which enhances performance by minimizing power loss during operation. The device is housed in a compact SO-8 package, facilitating easy integration into circuits while also offering thermal management benefits.
The SI7463ADP-T1-GE3 is ideal for applications requiring high efficiency and reliability, making it a popular choice in consumer electronics, automotive systems, and industrial equipment. Its design helps improve overall energy efficiency, contributing to lower operational costs and extended battery life in portable devices.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of up to 62A, and a low R_DS(on) value, which enhances performance by minimizing power loss during operation. The device is housed in a compact SO-8 package, facilitating easy integration into circuits while also offering thermal management benefits.
The SI7463ADP-T1-GE3 is ideal for applications requiring high efficiency and reliability, making it a popular choice in consumer electronics, automotive systems, and industrial equipment. Its design helps improve overall energy efficiency, contributing to lower operational costs and extended battery life in portable devices.
Equivalent
The SI7463ADP-T1-GE3 is a N-channel MOSFET. Equivalent products include the BSS138, IRLML2502, and AO3401, which also offer similar electrical characteristics such as voltage and current ratings. However, always check specific datasheets for exact specifications and compatibility, as factors like RDS(on), VGS(th), and package type can vary.
Features
The SI7463ADP-T1-GE3 is a N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: 30V maximum drain-source voltage (VDS).
2. Current Rating: Continuous drain current (ID) up to 62A, suitable for high-current applications.
3. Low RDS(on): Offers a low on-resistance of approximately 5.5 mΩ, enhancing efficiency by reducing power loss during operation.
4. Fast Switching Speed: Ideal for high-frequency applications, providing rapid switching capabilities.
5. Thermal Performance: A robust thermal resistance ensures effective heat dissipation, allowing for reliable performance under demanding conditions.
6. Package Type: Available in a compact TO-220 package, facilitating easy integration into various circuits.
7. Applications: Commonly used in DC-DC converters, motor control, and power management systems.
These features make the SI7463ADP-T1-GE3 suitable for automotive, industrial, and consumer electronics applications, where efficiency and performance are critical.
1. Voltage Rating: 30V maximum drain-source voltage (VDS).
2. Current Rating: Continuous drain current (ID) up to 62A, suitable for high-current applications.
3. Low RDS(on): Offers a low on-resistance of approximately 5.5 mΩ, enhancing efficiency by reducing power loss during operation.
4. Fast Switching Speed: Ideal for high-frequency applications, providing rapid switching capabilities.
5. Thermal Performance: A robust thermal resistance ensures effective heat dissipation, allowing for reliable performance under demanding conditions.
6. Package Type: Available in a compact TO-220 package, facilitating easy integration into various circuits.
7. Applications: Commonly used in DC-DC converters, motor control, and power management systems.
These features make the SI7463ADP-T1-GE3 suitable for automotive, industrial, and consumer electronics applications, where efficiency and performance are critical.
Pinout
The SI7463ADP-T1-GE3 is a N-channel MOSFET with a total of 8 pins. Its primary functions include acting as a switch or amplifier in electronic circuits. The pinout is as follows:
1. Gate (G) - Controls the MOSFET's operation; applying voltage here turns the device on.
2. Drain (D) - The terminal through which the current flows out of the device when it is on.
3. Source (S) - The terminal through which current enters the device.
4. Additional Pins - There are often additional pins for various functions such as thermal pads or for specific configurations, but the primary functions revolve around the gate, drain, and source.
This MOSFET is commonly used in power management applications due to its low on-resistance and high efficiency.
1. Gate (G) - Controls the MOSFET's operation; applying voltage here turns the device on.
2. Drain (D) - The terminal through which the current flows out of the device when it is on.
3. Source (S) - The terminal through which current enters the device.
4. Additional Pins - There are often additional pins for various functions such as thermal pads or for specific configurations, but the primary functions revolve around the gate, drain, and source.
This MOSFET is commonly used in power management applications due to its low on-resistance and high efficiency.
Manufacturer
The SI7463ADP-T1-GE3 is manufactured by Semiconductor Components Industries, LLC, which is a part of Skyworks Solutions, Inc. Skyworks is a global company that designs, develops, and manufactures semiconductor products, primarily for the wireless communications sector. They specialize in analog and mixed-signal semiconductors, including power amplifiers, RF front-end modules, and other components used in mobile devices, networking equipment, and Internet of Things (IoT) applications. Skyworks Solutions is known for its cutting-edge technology and innovative solutions that enable connectivity and enhance performance in various electronic devices. The SI7463ADP-T1-GE3 specifically is a N-channel MOSFET, used widely in power management applications including switching and amplification.
Application
The SI7463ADP-T1-GE3 is a N-channel MOSFET designed for various applications including power management, DC-DC converters, and motor control. It is suitable for switching applications in consumer electronics, telecom infrastructure, and industrial equipment. Its low on-resistance and fast switching capabilities make it ideal for use in power supplies, battery management systems, and energy-efficient designs. Additionally, it can be utilized in synchronous rectification and load switching applications, enhancing overall system efficiency in both high and low voltage environments.
Package
The SI7463ADP-T1-GE3 is packaged in a DPAK (TO-252) type, which is a surface-mount package designed for efficient thermal performance and compact size, suitable for power applications.
