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SI9945BDY
+БОМMOSFET 2N-CH 60V 4.3A 8SOP
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ПроизводительУМВ
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Мфр. Часть #SI9945BDY
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Лист данных SI9945BDY DataSheet
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В наличии4325
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta), 5.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 4.3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 665pF @ 15V |
| Power - Max | 2W (Ta), 3.1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
Обзор
Description
Key specifications include a maximum drain-source voltage (V_DS) rating, which allows it to handle significant power levels, and a fast switching speed that minimizes energy losses during operation. The SI9945BDY also incorporates thermal protection features, ensuring reliability under high-temperature conditions. Its compact package design facilitates easy integration into space-constrained applications.
Overall, the SI9945BDY is an ideal choice for engineers looking to enhance the efficiency and performance of their electronic designs.
Equivalent
Features
1. Voltage Rating: It typically supports a drain-source voltage (Vds) of up to 30V.
2. Current Rating: Capable of handling continuous drain current (Id) around 10A, enabling efficient power management.
3. Rds(on): Features a low on-resistance (Rds(on)), typically around 10mΩ, which reduces power loss and improves efficiency.
4. Gate Threshold Voltage: Offers a low gate threshold voltage (Vgs(th)), allowing for easy driving with lower voltage levels.
5. Fast Switching: Optimized for fast switching speeds, making it suitable for applications like DC-DC converters and power management circuits.
6. Thermal Performance: Designed with good thermal characteristics to handle heat effectively during operation.
7. Package: Available in a surface-mount package, facilitating compact designs in electronic circuits.
These features make the SI9945BDY suitable for a variety of applications including power supplies, motor drivers, and other switching applications.
Pinout
Pin Functions:
1. VDD (Pin 1): Power supply input.
2. GND (Pin 2): Ground reference.
3. IN (Pin 3): Input signal for driving the MOSFET.
4. OUT (Pin 4): Output to drive the gate of the MOSFET.
5. RBOOT (Pin 5): Bootstrapped capacitor connection for high-side driving.
6. VB (Pin 6): Bootstrapped supply voltage for high-side driver.
7. VS (Pin 7): Source connection for the high-side driver.
8. COM (Pin 8): Common pin for low-side and high-side control.
This driver is optimized for high-speed switching applications and provides efficient gate drive for both high-side and low-side configurations.
Manufacturer
Silicon Labs is recognized for its innovation in low-power, high-efficiency technologies, making it a key player in the semiconductor industry. The company emphasizes enabling connectivity and performance for smart, connected devices, which aligns with the growing demand for advanced electronic solutions in a rapidly evolving market.
Application
1. Switching Power Supplies: Enhancing efficiency in DC-DC converters.
2. Motor Control: Driving MOSFETs in inverter circuits for brushless DC motors.
3. Class D Audio Amplifiers: Providing high-speed switching for improved audio performance.
4. Battery Management Systems: Managing MOSFETs in charging and discharging circuits.
5. Telecommunications: Powering RF amplifiers and other high-frequency applications.
Its features support fast switching, low gate drive power, and good thermal performance, making it suitable for various high-efficiency applications.