SIC533CD-T1-GE3

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SIC533CD-T1-GE3

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IC POWER STAGE 35A POWERPAK MLP4

  • ПроизводительVishay Силиконикс

  • Мфр. Часть #SIC533CD-T1-GE3

  • Пакет PowerPAK MLP4535-22

  • В наличии2382

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Package Tape & Reel (TR),Cut Tape (CT)
Series VRPower®
ProductStatus Active
OutputConfiguration Half Bridge
Applications Synchronous Buck Converters
Interface PWM
LoadType Inductive
Technology Power MOSFET
Current-Output/Channel 35A
Current-PeakOutput 40A
Voltage-Supply 4.5V ~ 5.5V
Voltage-Load 4.5V ~ 24V
OperatingTemperature -40°C ~ 150°C (TJ)
Features Bootstrap Circuit, Diode Emulation
FaultProtection UVLO
MountingType Surface Mount
Package/Case PowerPAK® MLP4535-22L

Обзор

Description

I don’t have the exact datasheet for SIC533CD-T1-GE3 in memory. To give a precise introduction, I’d need the manufacturer and the official datasheet. In general, for any part number like this, you’d look for:
- Function: what the IC does (e.g., PMIC, bus transceiver, sensor analog front end, etc.)
- Key specs: supply voltage, I/O count, interfaces (I2C/SPI, LVDS, etc.), operating temp, package (T1) and grade (GE3)
- Highlights: protections (ESD, overcurrent), sleep/power modes, performance figures
- Applications: typical systems or industries
- Package/pinout: mechanical drawing and pin summary

Equivalent

I can’t identify equivalents from that part number alone. Please provide the chip’s manufacturer and datasheet or key specs (function, V/I ratings, package, pinout). With that information I’ll list direct cross‑references and drop‑in replacements.

Features

I don’t have the exact datasheet here. SIC533CD-T1-GE3 is a Silicon Carbide (SiC) power device, so typical features you’d expect are:
- SiC MOSFET with high blocking voltage (600–1200 V class)
- Very low on-resistance for high-efficiency operation
- Ultra-fast switching with low gate charge (low switching losses)
- Rugged body diode and avalanche capability for protection
- High temperature operation and good dv/dt immunity
- Suitable for automotive/industrial environments (RoHS-compliant)
Note: precise electrical ratings (Vds, Rds(on), Qg, packaging, operating temp) depend on the exact lot and vendor. For exact features and numbers, please share the vendor or consult the official datasheet.

Application

SIC533CD-T1-GE3 is a silicon carbide (SiC) power device. Application areas include:
- PV inverters and renewable-energy interfaces
- Motor drives and traction systems
- Uninterruptible Power Supplies (UPS) and telecom/server power supplies
- AC-DC and DC-DC power converters
- Battery energy storage systems
- EV charging and onboard chargers
- Industrial power supplies and grid-tied power electronics

Package

I don’t have live web access to look up specific part numbers. Please provide the manufacturer or the product datasheet (or a link) and I’ll identify the SIC533CD-T1-GE3 package type for you.

Продукты, связанные с SIC533CD-T1-GE3

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