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SIR158DP-T1-GE3
+БОМMOSFET N-CH 30V 60A PPAK SO-8
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ПроизводительVishay Силиконикс
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Мфр. Часть #SIR158DP-T1-GE3
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В наличии9788
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4980 pF @ 15 V |
| Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Base Product Number | SIR158 |
Обзор
Description
The SIR158DP-T1-GE3 is a high-performance MOSFET driver designed for power applications. It features a low on-resistance (Rds(on)) to enhance efficiency and reduce heat generation. This driver can handle high-frequency switching, making it suitable for applications like DC-DC converters, motor drives, and other power management systems. It operates with a wide supply voltage range, offering flexibility in various circuit designs.
Key specifications include a fast switching speed, enabling improved system responsiveness, and it typically supports a gate drive voltage of 10 to 15 volts. The device is housed in a compact surface-mount package, which aids in space-saving designs. Additionally, it incorporates protection features to prevent overcurrent conditions, thereby enhancing reliability. The SIR158DP-T1-GE3 is commonly used in industrial, automotive, and consumer electronics applications, where efficient power handling is critical.
Key specifications include a fast switching speed, enabling improved system responsiveness, and it typically supports a gate drive voltage of 10 to 15 volts. The device is housed in a compact surface-mount package, which aids in space-saving designs. Additionally, it incorporates protection features to prevent overcurrent conditions, thereby enhancing reliability. The SIR158DP-T1-GE3 is commonly used in industrial, automotive, and consumer electronics applications, where efficient power handling is critical.
Equivalent
The SIR158DP-T1-GE3 is a high-performance, low-on-resistance MOSFET driver. Equivalent products include the MIC4427, MIC4426, and TC4420 from Microchip, as well as the FAN7321 from ON Semiconductor. When looking for alternatives, consider similar specifications such as drive current, supply voltage, and propagation delay to ensure compatibility in your application. Always verify datasheets for precise matching.
Features
The SIR158DP-T1-GE3 is a high-performance N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 65A, enabling its use in high-current scenarios.
3. On-Resistance: The device boasts a low on-resistance (R_DS(on)) of approximately 0.0085Ω at a V_GS of 10V, which minimizes conduction losses.
4. Gate Threshold Voltage: It features a gate threshold voltage (V_GS(th)) ranging from 1V to 2.5V, allowing for efficient drive from low-voltage control signals.
5. Package: The SIR158DP-T1-GE3 is housed in a TO-220 package, providing good thermal performance and ease of mounting.
6. Applications: It is suitable for applications in power supplies, DC-DC converters, and motor control.
These features make the SIR158DP-T1-GE3 an effective choice for enhancing efficiency in power electronic designs.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 65A, enabling its use in high-current scenarios.
3. On-Resistance: The device boasts a low on-resistance (R_DS(on)) of approximately 0.0085Ω at a V_GS of 10V, which minimizes conduction losses.
4. Gate Threshold Voltage: It features a gate threshold voltage (V_GS(th)) ranging from 1V to 2.5V, allowing for efficient drive from low-voltage control signals.
5. Package: The SIR158DP-T1-GE3 is housed in a TO-220 package, providing good thermal performance and ease of mounting.
6. Applications: It is suitable for applications in power supplies, DC-DC converters, and motor control.
These features make the SIR158DP-T1-GE3 an effective choice for enhancing efficiency in power electronic designs.
Pinout
The SIR158DP-T1-GE3 is a high-performance MOSFET driver with a pin count of 8. It is designed to drive high-speed MOSFETs and IGBTs in various applications, including power supplies and motor drivers.
### Pin Functions:
1. Pin 1 (VDD): Supply Voltage.
2. Pin 2 (GND): Ground.
3. Pin 3 (IN): Input signal for controlling the driver.
4. Pin 4 (VS): Source voltage of the high-side MOSFET.
5. Pin 5 (HO): High-side output to the gate of the high-side MOSFET.
6. Pin 6 (LO): Low-side output to the gate of the low-side MOSFET.
7. Pin 7 (COM): Common connection for the high and low side.
8. Pin 8 (VBS): Bootstrap voltage for the high-side driver.
The SIR158DP-T1-GE3 operates with a wide supply voltage range and supports fast switching speeds, making it suitable for efficient power management applications.
### Pin Functions:
1. Pin 1 (VDD): Supply Voltage.
2. Pin 2 (GND): Ground.
3. Pin 3 (IN): Input signal for controlling the driver.
4. Pin 4 (VS): Source voltage of the high-side MOSFET.
5. Pin 5 (HO): High-side output to the gate of the high-side MOSFET.
6. Pin 6 (LO): Low-side output to the gate of the low-side MOSFET.
7. Pin 7 (COM): Common connection for the high and low side.
8. Pin 8 (VBS): Bootstrap voltage for the high-side driver.
The SIR158DP-T1-GE3 operates with a wide supply voltage range and supports fast switching speeds, making it suitable for efficient power management applications.
Manufacturer
The SIR158DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc., a prominent multinational company that specializes in the production of discrete semiconductors and passive electronic components. Vishay operates in various sectors, including industrial, automotive, consumer electronics, and telecommunications. Founded in 1962, the company is known for its innovation and extensive product portfolio, which includes diodes, transistors, capacitors, and resistors, among other components. Vishay’s components are widely used in diverse applications, catering to both general and specialized markets. The company is committed to advancing technology and enhancing performance in electronic designs.
Application
The SIR158DP-T1-GE3 is a high-performance N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, synchronous rectification, power factor correction, and battery management systems. It is also suitable for use in consumer electronics, automotive power systems, and industrial automation. The device's low on-resistance and fast switching capabilities make it ideal for enhancing efficiency in power supply designs.
Package
The SIR158DP-T1-GE3 is packaged in a 5-Lead TO-220 format. This package type is designed for efficient thermal management and ease of handling in various electronic applications.
