SPD07N60C3

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SPD07N60C3

+БОМ

MOSFET N-CH 600V 7.3A TO252-3

  • Производителькомпанией Infineon Technologies

  • Мфр. Часть #SPD07N60C3

  • Пакет TO-252-3

  • В наличии1733

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Package / Case Bulk
Series CoolMOS™
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain(Id) @ 25°C 7.3A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 600mOhm @ 4.6A, 10V
Vgs(th)(Max) @ Id 3.9V @ 350µA
Gate Charge(Qg)(Max) @ Vgs 27 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 790 pF @ 25 V
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3

Обзор

Description

The SPD07N60C3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) developed by Infineon Technologies. Part of the CoolMOS™ series, this device is designed to offer high efficiency and performance, commonly used in power supply and power management applications. It features a drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 7A, suitable for high-voltage applications.
Key attributes include low on-resistance, which reduces power losses and improves efficiency, and a fast switching speed, making it ideal for use in switching power supplies, LED drivers, and other high-frequency circuits. The SPD07N60C3 typically comes in a TO-220 package, which provides a robust physical form factor that can handle significant heat dissipation, although other package options may also exist.
The device is noted for its robust performance under demanding conditions, offering a good balance between cost and efficiency for manufacturers looking to optimize power conversion systems.

Equivalent

The SPD07N60C3 is a 600V, 7A N-channel MOSFET commonly used in power supply and power management applications. Equivalent products can include:
1. STP7NK60Z by STMicroelectronics
2. IRF740 by Infineon Technologies
3. FQP7N60C by ON Semiconductor
4. TK8A60D by Toshiba
These alternatives share similar voltage and current ratings but always verify the specifications and pin configurations to ensure compatibility with your application.

Features

The SPD07N60C3 is a power MOSFET designed for various electronic applications, known for its efficient performance and reliability. Key features include:
1. Voltage and Current Ratings: It offers a drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 7A, making it suitable for high-voltage applications.
2. Low On-State Resistance: It features a low R_DS(on) value, which minimizes conduction losses and improves efficiency, especially in switching applications.
3. Fast Switching Speed: The MOSFET is designed for fast switching, reducing energy loss during transitions and enhancing overall system efficiency.
4. CoolMOS™ Technology: It incorporates Infineon's CoolMOS™ technology, delivering superior thermal performance and enabling higher power density designs.
5. High Avalanche Ruggedness: The device is robust against voltage spikes and surges, ensuring reliability and longevity in demanding environments.
6. TO-220 Package: It comes in a TO-220 package, facilitating easy mounting and heat dissipation.
These features make the SPD07N60C3 ideal for applications such as power supplies, motor drives, and other industrial and consumer electronics requiring high efficiency and reliability.

Pinout

The SPD07N60C3 is a power MOSFET from Infineon's CoolMOS series. It is typically offered in a TO-220 or similar package with three pins: Gate (G), Drain (D), and Source (S).
- Gate (G): This pin controls the MOSFET's operation. A voltage applied here allows current to flow between the Drain and Source.
- Drain (D): This is the pin where the main current enters the MOSFET.
- Source (S): This is the pin where the main current exits the MOSFET.
The SPD07N60C3 is designed for high-efficiency power conversion applications, providing low on-state resistance and fast switching capabilities, which make it suitable for use in switching power supplies and other high-frequency circuits.

Manufacturer

The SPD07N60C3 is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in a wide range of electronic components. The company is known for producing semiconductors and system solutions that are used in automotive, industrial, and consumer electronics, as well as in security and communications applications. Infineon's products are integral to numerous technologies, including power management systems, microcontrollers, sensors, and power semiconductors, making them a key player in the electronics and technology sectors.

Application

The SPD07N60C3 is a power MOSFET designed for high-efficiency applications, commonly used in the following areas:
1. Switched-Mode Power Supplies (SMPS): Utilized for efficient power conversion in chargers and adapters.
2. Motor Drives: Employed in motor control systems for improved performance and energy savings.
3. Lighting Systems: Ideal for LED drivers and lighting ballasts due to its low power loss.
4. Renewable Energy Systems: Used in solar inverters for converting DC to AC efficiently.
5. Industrial Applications: Suitable for industrial power control and management systems.
These applications benefit from the MOSFET’s low on-state resistance and high-speed switching capabilities, enhancing overall system efficiency.

Package

The SPD07N60C3 is a N-channel MOSFET, typically housed in a TO-220 package.

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