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SSM3J332R,LF
+БОМMOSFET P-CH 30V 6A SOT23F
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ПроизводительКомпания Toshiba Semiconductor и Storage
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Мфр. Часть #SSM3J332R,LF
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Лист данных SSM3J332R,LF DataSheet
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Пакет SOT-23-3
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В наличии2205
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | U-MOSVI |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 6A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 10V |
| Rds On(Max) @ Id Vgs | 42mOhm @ 5A, 10V |
| Vgs(th)(Max) @ Id | 1.2V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 8.2 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 560 pF @ 15 V |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23F |
Обзор
Description
The SSM3J332R,LF is a small-signal MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba. It is widely used in electronic circuits for switching and amplification purposes. This component is characterized by its low on-resistance and high-speed switching capabilities, making it suitable for battery-powered applications, power management, and portable devices.
Key features of the SSM3J332R,LF include its compact package size (typically SOT-23), which ensures space efficiency in circuit design. It operates at low voltages and currents, providing energy efficiency and prolonging the battery life in portable electronics. The MOSFET is designed to handle moderate power levels, making it ideal for applications requiring efficient energy usage.
Overall, the SSM3J332R,LF is valued in various electronic applications for its reliability, performance, and compact form factor, aligning with modern demands for miniaturization and energy efficiency in electronic design.
Key features of the SSM3J332R,LF include its compact package size (typically SOT-23), which ensures space efficiency in circuit design. It operates at low voltages and currents, providing energy efficiency and prolonging the battery life in portable electronics. The MOSFET is designed to handle moderate power levels, making it ideal for applications requiring efficient energy usage.
Overall, the SSM3J332R,LF is valued in various electronic applications for its reliability, performance, and compact form factor, aligning with modern demands for miniaturization and energy efficiency in electronic design.
Equivalent
The SSM3J332R,LF is a P-channel MOSFET. Equivalent products may include similar P-channel MOSFETs with comparable specifications such as voltage, current ratings, and package type. Examples are:
1. AO3407 from Alpha & Omega Semiconductor
2. SI2323DS from Vishay
3. BSS84 from Infineon Technologies
Ensure to compare the datasheets for specific parameters to confirm compatibility.
1. AO3407 from Alpha & Omega Semiconductor
2. SI2323DS from Vishay
3. BSS84 from Infineon Technologies
Ensure to compare the datasheets for specific parameters to confirm compatibility.
Features
The SSM3J332R,LF is a N-channel MOSFET transistor manufactured by Toshiba. Here are its key features:
1. Type: N-channel MOSFET.
2. Voltage Rating: Typically, it supports a drain-source voltage (V_DS) of up to around 30V.
3. Current Rating: The continuous drain current (I_D) is generally significant, often up to several amperes, though specific values should be checked in the datasheet.
4. Low On-Resistance: It offers low drain-source on-resistance (R_DS(on)), which ensures high efficiency and reduced power loss.
5. High-Speed Switching: Designed for high-speed switching applications, making it suitable for a variety of power management applications.
6. Small Package Size: Usually available in surface-mount packages, beneficial for compact circuit designs.
7. Applications: Commonly used in DC-DC converters, power management systems, motor drivers, and other electronic devices requiring efficient switching.
For precise values and additional parameters, consulting the official datasheet is recommended.
1. Type: N-channel MOSFET.
2. Voltage Rating: Typically, it supports a drain-source voltage (V_DS) of up to around 30V.
3. Current Rating: The continuous drain current (I_D) is generally significant, often up to several amperes, though specific values should be checked in the datasheet.
4. Low On-Resistance: It offers low drain-source on-resistance (R_DS(on)), which ensures high efficiency and reduced power loss.
5. High-Speed Switching: Designed for high-speed switching applications, making it suitable for a variety of power management applications.
6. Small Package Size: Usually available in surface-mount packages, beneficial for compact circuit designs.
7. Applications: Commonly used in DC-DC converters, power management systems, motor drivers, and other electronic devices requiring efficient switching.
For precise values and additional parameters, consulting the official datasheet is recommended.
Pinout
The SSM3J332R,LF is a P-channel MOSFET transistor. It typically comes in a small surface-mount package, such as SOT-23. The pin count for this package is usually 3 pins. The functions of these pins are generally as follows:
1. Gate (G): This pin is used to control the transistor. Applying a voltage to the gate can turn the transistor on or off.
2. Source (S): This pin is typically connected to the ground or the negative side of the power supply for a P-channel MOSFET.
3. Drain (D): The drain is the pin through which the current flows from the source when the transistor is turned on.
These MOSFETs are used in various applications like switching and amplification, owing to their efficiency and compact size. For specific and detailed electrical characteristics, it is advisable to refer to the datasheet provided by the manufacturer.
1. Gate (G): This pin is used to control the transistor. Applying a voltage to the gate can turn the transistor on or off.
2. Source (S): This pin is typically connected to the ground or the negative side of the power supply for a P-channel MOSFET.
3. Drain (D): The drain is the pin through which the current flows from the source when the transistor is turned on.
These MOSFETs are used in various applications like switching and amplification, owing to their efficiency and compact size. For specific and detailed electrical characteristics, it is advisable to refer to the datasheet provided by the manufacturer.
Manufacturer
The SSM3J332R,LF is manufactured by Toshiba Electronic Devices & Storage Corporation. Toshiba is a well-established Japanese multinational conglomerate with a diverse range of business segments, including digital products, electronic devices, infrastructure systems, home appliances, and more. Specifically, the Toshiba Electronic Devices & Storage Corporation division focuses on the development and manufacturing of semiconductors and storage products.
Toshiba is recognized for its significant contributions to the electronics industry, including advancements in semiconductor technology. The company is known for producing a wide array of electronic components, such as transistors, diodes, and integrated circuits, which serve various applications in consumer electronics, automotive, industrial, and other sectors. The SSM3J332R,LF is a part of their offering in semiconductor devices, specifically as a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), which is used for switching and amplifying electronic signals.
Toshiba is recognized for its significant contributions to the electronics industry, including advancements in semiconductor technology. The company is known for producing a wide array of electronic components, such as transistors, diodes, and integrated circuits, which serve various applications in consumer electronics, automotive, industrial, and other sectors. The SSM3J332R,LF is a part of their offering in semiconductor devices, specifically as a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), which is used for switching and amplifying electronic signals.
Application
The SSM3J332R,LF is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications. Key application areas include:
1. Power Management: Used in voltage regulation and power conversion circuits due to its efficiency in switching applications.
2. Load Switches: Ideal for controlling power distribution in electronic devices.
3. DC-DC Converters: Suitable for use in buck, boost, or buck-boost converters in power supply circuits.
4. Battery-Powered Devices: Employed in portable electronics for efficient power usage.
5. Signal Processing: Utilized in amplifying or switching electronic signals.
6. Consumer Electronics: Applied in smartphones, tablets, and other gadgets for efficient power management.
These attributes make it a versatile component in modern electronic circuits.
1. Power Management: Used in voltage regulation and power conversion circuits due to its efficiency in switching applications.
2. Load Switches: Ideal for controlling power distribution in electronic devices.
3. DC-DC Converters: Suitable for use in buck, boost, or buck-boost converters in power supply circuits.
4. Battery-Powered Devices: Employed in portable electronics for efficient power usage.
5. Signal Processing: Utilized in amplifying or switching electronic signals.
6. Consumer Electronics: Applied in smartphones, tablets, and other gadgets for efficient power management.
These attributes make it a versatile component in modern electronic circuits.
Package
The SSM3J332R,LF is a MOSFET transistor typically housed in a SOT-23 package. The SOT-23 is a small, surface-mount package that is commonly used for various semiconductor components, including transistors and diodes, due to its compact size and suitable performance for low to moderate power applications.
