Изображения являются только для ссылки
SST12LP17E-XX8E
+БОМIC AMP 802.11B/G/N 2.4GHZ 8X2SON
-
ПроизводительТехнология микрочипов
-
Мфр. Часть #SST12LP17E-XX8E
-
Лист данных SST12LP17E-XX8E DataSheet
-
Пакет XFDFN-8
-
В наличии5477
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | Microchip Technology |
| Package / Case | Tape & Reel (TR) |
| Part Status | Obsolete |
| Frequency | 2.4GHz ~ 2.5GHz |
| Gain | 29dB |
| RF Type | 802.11b/g/n |
| Voltage - Supply | 3.3V |
| Test Frequency | 2.4GHz |
| Mounting Type | Surface Mount |
Обзор
Description
Key features include a high gain of around 30 dB, integrated power detectors for accurate power control, and excellent thermal performance to ensure reliability. The module supports various modulation schemes, including OFDM, making it versatile for different communication standards. Its compact package facilitates easy integration into modern compact electronic designs.
The SST12LP17E-XX8E is ideal for consumer electronics, industrial IoT applications, and any system requiring robust wireless communication capabilities. By providing a combination of efficiency, power, and linearity, it helps enhance the overall performance and range of wireless communication devices.
Equivalent
Features
1. Frequency Range: It operates efficiently in the 2.4 GHz band, making it suitable for WLAN applications like IEEE 802.11b/g/n.
2. Output Power: The device delivers a high output power, typically over 18 dBm, which helps in extended range and improved signal quality.
3. Efficiency: It offers high power-added efficiency, reducing power consumption and heat generation, which is critical for battery-operated devices.
4. Linear Performance: The amplifier supports a high linearity, ensuring minimal distortion and better signal integrity, which is crucial for modulation techniques used in WLAN.
5. Package: It is available in a compact 8-contact VQFN package, facilitating easy integration into space-constrained designs.
6. Bias Control: The part includes an integrated input match and an active bias control, which simplifies design and enhances performance consistency across temperature variations.
7. Thermal Management: It is designed with robust thermal management to handle operation in demanding environments.
These features make the SST12LP17E-XX8E suitable for applications requiring efficient, high-power RF amplification with minimal distortion.
Pinout
1. Pin 1 (VCC1): Supply voltage for the amplifier.
2. Pin 2 (GND): Ground connection.
3. Pin 3 (RFIN): RF input, where the low-power RF signal is fed into the amplifier.
4. Pin 4 (VEN): Enable control; typically used to turn the amplifier on or off.
5. Pin 5 (PA_EN): Power amplifier enable, often used to control the operational state.
6. Pin 6 (VCC2): Another supply voltage input, primarily for the output stage.
7. Pin 7 (RFOUT): RF output, where the amplified RF signal is output.
8. Pin 8 (GND): Another ground connection for stability and noise reduction.
The SST12LP17E-XX8E is used mainly in wireless communication devices, providing high efficiency and linearity essential for 802.11b/g/n WLAN systems.