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STB30N65M5
+БОМMOSFET N-CH 650V 22A D2PAK
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ПроизводительSTМикроэлектроника
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Мфр. Часть #STB30N65M5
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Лист данных STB30N65M5 DataSheet
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В наличии8372
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ V |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 22A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 139mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 64 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2880 pF @ 100 V |
| PowerDissipation(Max) | 140W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
Обзор
Description
The STB30N65M5 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It is part of STMicroelectronics' MDmesh™ M5 series, which is optimized for achieving low on-state resistance and high-speed switching. The device is typically used in applications such as power supplies, converters, and other power management systems.
Key features of the STB30N65M5 include a drain-source voltage (V_DS) of 650V, a continuous drain current (I_D) of 30A, and a low on-resistance (R_DS(on)) of approximately 0.08 ohms. These characteristics make it suitable for handling significant power loads while maintaining efficiency. The MOSFET's high breakdown voltage and low gate charge contribute to its performance in high-frequency circuits, reducing energy loss during operation.
The STB30N65M5 is housed in a TO-220 package, which provides a convenient form factor for heat dissipation and easy integration into existing designs. Its robustness and reliability make it a popular choice for designers seeking efficient power management solutions.
Key features of the STB30N65M5 include a drain-source voltage (V_DS) of 650V, a continuous drain current (I_D) of 30A, and a low on-resistance (R_DS(on)) of approximately 0.08 ohms. These characteristics make it suitable for handling significant power loads while maintaining efficiency. The MOSFET's high breakdown voltage and low gate charge contribute to its performance in high-frequency circuits, reducing energy loss during operation.
The STB30N65M5 is housed in a TO-220 package, which provides a convenient form factor for heat dissipation and easy integration into existing designs. Its robustness and reliability make it a popular choice for designers seeking efficient power management solutions.
Equivalent
The STB30N65M5 is a 650V, 30A N-channel MOSFET. Equivalent products include:
1. Infineon IPB65R150CFD - 650V, 32A MOSFET.
2. Vishay SiHG30N65EF - 650V, 29A MOSFET.
3. ON Semiconductor FDPF30N65 - 650V, 30A MOSFET.
4. Rohm R6020KNX - 650V, 30A MOSFET.
5. Fairchild (now ON Semiconductor) FQA30N65 - 650V, 30A MOSFET.
Ensure to compare datasheets for specific parameters.
1. Infineon IPB65R150CFD - 650V, 32A MOSFET.
2. Vishay SiHG30N65EF - 650V, 29A MOSFET.
3. ON Semiconductor FDPF30N65 - 650V, 30A MOSFET.
4. Rohm R6020KNX - 650V, 30A MOSFET.
5. Fairchild (now ON Semiconductor) FQA30N65 - 650V, 30A MOSFET.
Ensure to compare datasheets for specific parameters.
Features
The STB30N65M5 is a power MOSFET from STMicroelectronics. It belongs to the MDmesh™ M5 series, which is known for its high efficiency and low on-resistance. Key features include:
1. N-channel MOSFET: Designed for high-performance switching applications.
2. Drain Source Voltage (Vds): Can handle a maximum of 650V, making it suitable for high-voltage applications.
3. Continuous Drain Current (Id): Supports up to 30A, allowing for substantial power throughput.
4. Low On-Resistance (Rds(on)): Features a low on-state resistance, which minimizes power dissipation and improves efficiency.
5. Fast Switching Speed: Ensures high efficiency in switching operations.
6. Enhanced Avalanche Ruggedness: Provides improved reliability under high-stress conditions.
7. Applications: Ideal for use in power supplies, converters, and other high-frequency applications.
These features make the STB30N65M5 a versatile choice for designers looking to optimize their power management systems with a focus on efficiency and reliability.
1. N-channel MOSFET: Designed for high-performance switching applications.
2. Drain Source Voltage (Vds): Can handle a maximum of 650V, making it suitable for high-voltage applications.
3. Continuous Drain Current (Id): Supports up to 30A, allowing for substantial power throughput.
4. Low On-Resistance (Rds(on)): Features a low on-state resistance, which minimizes power dissipation and improves efficiency.
5. Fast Switching Speed: Ensures high efficiency in switching operations.
6. Enhanced Avalanche Ruggedness: Provides improved reliability under high-stress conditions.
7. Applications: Ideal for use in power supplies, converters, and other high-frequency applications.
These features make the STB30N65M5 a versatile choice for designers looking to optimize their power management systems with a focus on efficiency and reliability.
Pinout
The STB30N65M5 is a power MOSFET from STMicroelectronics. It typically comes in a D²PAK package. This MOSFET is designed for high-efficiency switching applications.
The key features of the STB30N65M5 include:
- Pin Count: The device has three primary pins:
1. Gate (G): The gate terminal controls the MOSFET's switching operation by varying the voltage applied to it.
2. Drain (D): The drain is the terminal where the load current enters when the MOSFET is in the 'on' state.
3. Source (S): The source is the terminal where the load current exits the MOSFET.
- Function: The STB30N65M5 is utilized in applications that require efficient power conversion and management, such as power supplies, motor drives, and other high-frequency switching applications. It offers low on-state resistance, high-speed switching, and robustness, making it suitable for demanding environments.
For detailed specifications and characteristics, consulting the datasheet from STMicroelectronics is recommended.
The key features of the STB30N65M5 include:
- Pin Count: The device has three primary pins:
1. Gate (G): The gate terminal controls the MOSFET's switching operation by varying the voltage applied to it.
2. Drain (D): The drain is the terminal where the load current enters when the MOSFET is in the 'on' state.
3. Source (S): The source is the terminal where the load current exits the MOSFET.
- Function: The STB30N65M5 is utilized in applications that require efficient power conversion and management, such as power supplies, motor drives, and other high-frequency switching applications. It offers low on-state resistance, high-speed switching, and robustness, making it suitable for demanding environments.
For detailed specifications and characteristics, consulting the datasheet from STMicroelectronics is recommended.
Manufacturer
The STB30N65M5 is manufactured by STMicroelectronics. STMicroelectronics is a leading global semiconductor company that designs, manufactures, and markets a wide range of electronic components for various applications. The company serves diverse industries, including automotive, industrial, personal electronics, and communications equipment. STMicroelectronics is known for its innovation and focus on sustainability, providing solutions that help save energy and improve the efficiency of electronic devices.
Application
The STB30N65M5 is a power MOSFET commonly used in various applications due to its high voltage capability and efficiency. Typical application areas include:
1. Switching Power Supplies: Used in converters and inverters for efficient power management.
2. Motor Control: Ideal for driving motors in industrial and automotive applications.
3. Lighting Systems: Used in LED and other lighting solutions for energy-efficient control.
4. Renewable Energy: Employed in solar inverters and other renewable energy systems.
5. Uninterruptible Power Supplies (UPS): Ensures reliable power backup solutions.
Its high efficiency and fast switching make it suitable for applications demanding high power density and low energy loss.
1. Switching Power Supplies: Used in converters and inverters for efficient power management.
2. Motor Control: Ideal for driving motors in industrial and automotive applications.
3. Lighting Systems: Used in LED and other lighting solutions for energy-efficient control.
4. Renewable Energy: Employed in solar inverters and other renewable energy systems.
5. Uninterruptible Power Supplies (UPS): Ensures reliable power backup solutions.
Its high efficiency and fast switching make it suitable for applications demanding high power density and low energy loss.
Package
The STB30N65M5 is a N-channel MOSFET that comes in a D²PAK (TO-263) package. This package type is designed for surface mounting and offers efficient thermal performance suitable for high-power applications.
