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STD13N60DM2
+БОМMOSFET N-CH 600V 11A DPAK
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ПроизводительSTМикроэлектроника
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Мфр. Часть #STD13N60DM2
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Лист данных STD13N60DM2 DataSheet
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В наличии8764
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Спецификации
| Атрибут | Ценность |
| Series | MDmesh™ DM2 |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 11A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 365mOhm @ 5.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 19 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 730 pF @ 100 V |
| PowerDissipation(Max) | 110W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
| Package/Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| BaseProductNumber | STD13 |
Обзор
Description
The STD13N60DM2 is a high-voltage N-channel MOSFET designed for various applications, including power switching and inverter circuits. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 13A, making it suitable for high-power applications. The device is characterized by low on-resistance (R_DS(on)), which enhances efficiency and reduces heat generation during operation.
The STD13N60DM2 is part of STMicroelectronics' DM2 series, known for its robustness and reliability. Its gate threshold voltage (V_GS(th)) allows for effective switching with low gate drive requirements. The MOSFET typically comes in a TO-220 package, facilitating easy heat dissipation.
Applications include power supplies, motor drives, and industrial control systems, where high voltage and high efficiency are essential. Overall, the STD13N60DM2 is a versatile component ideal for engineers seeking reliable performance in demanding environments.
The STD13N60DM2 is part of STMicroelectronics' DM2 series, known for its robustness and reliability. Its gate threshold voltage (V_GS(th)) allows for effective switching with low gate drive requirements. The MOSFET typically comes in a TO-220 package, facilitating easy heat dissipation.
Applications include power supplies, motor drives, and industrial control systems, where high voltage and high efficiency are essential. Overall, the STD13N60DM2 is a versatile component ideal for engineers seeking reliable performance in demanding environments.
Equivalent
The STD13N60DM2 is a high-voltage N-channel MOSFET. Equivalent products include the STP13NM60, IRF840, and FQP13N60. Ensure to verify specifications like Vds, Id, Rds(on), and package type for compatibility in your application.
Features
The STD13N60DM2 is a N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage circuits.
2. Continuous Drain Current: Rated at 13A, allowing for substantial current handling.
3. R_DS(on): Low on-resistance of approximately 0.18Ω at V_GS = 10V, ensuring efficient operation with minimal power loss.
4. Gate Threshold Voltage (V_GS(th)): Typically 2-4V, enabling compatibility with various gate drive voltages.
5. Fast Switching: Designed for fast switching applications, reducing losses in high-frequency applications.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
7. Thermal Characteristics: Good thermal stability and ability to handle high temperatures.
This MOSFET is widely used in power supplies, motor drives, and industrial applications due to its robustness and efficiency.
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage circuits.
2. Continuous Drain Current: Rated at 13A, allowing for substantial current handling.
3. R_DS(on): Low on-resistance of approximately 0.18Ω at V_GS = 10V, ensuring efficient operation with minimal power loss.
4. Gate Threshold Voltage (V_GS(th)): Typically 2-4V, enabling compatibility with various gate drive voltages.
5. Fast Switching: Designed for fast switching applications, reducing losses in high-frequency applications.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
7. Thermal Characteristics: Good thermal stability and ability to handle high temperatures.
This MOSFET is widely used in power supplies, motor drives, and industrial applications due to its robustness and efficiency.
Pinout
The STD13N60DM2 is a N-channel MOSFET with a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the current flows out of the MOSFET. It connects to the load in a circuit.
3. Source (S): This pin is the terminal through which the current enters the MOSFET. It is typically connected to ground in common applications.
The STD13N60DM2 is designed for high-voltage applications and can handle up to 600V with a continuous drain current of 13A.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the current flows out of the MOSFET. It connects to the load in a circuit.
3. Source (S): This pin is the terminal through which the current enters the MOSFET. It is typically connected to ground in common applications.
The STD13N60DM2 is designed for high-voltage applications and can handle up to 600V with a continuous drain current of 13A.
Manufacturer
The STD13N60DM2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products, including power transistors, integrated circuits, and microcontrollers. The company serves various industries, including automotive, industrial, consumer electronics, and telecommunications.
Founded in 1987 through the merger of two companies, STMicroelectronics is headquartered in Geneva, Switzerland, and operates worldwide, with numerous manufacturing and research facilities. The company is known for its innovation in semiconductor technology, focusing on energy efficiency and performance. The STD13N60DM2, a N-channel MOSFET, is often used in applications involving power management and switching, showcasing STMicroelectronics' commitment to providing high-quality solutions for modern electronic systems.
Founded in 1987 through the merger of two companies, STMicroelectronics is headquartered in Geneva, Switzerland, and operates worldwide, with numerous manufacturing and research facilities. The company is known for its innovation in semiconductor technology, focusing on energy efficiency and performance. The STD13N60DM2, a N-channel MOSFET, is often used in applications involving power management and switching, showcasing STMicroelectronics' commitment to providing high-quality solutions for modern electronic systems.
Application
The STD13N60DM2 is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key applications include:
1. Switching Power Supplies: Efficient voltage conversion in power supply circuits.
2. Motor Control: For driving DC and AC motors in industrial and consumer applications.
3. Lighting Control: Used in LED drivers and dimmers.
4. Inverters: For solar power systems and uninterruptible power supplies (UPS).
5. Automotive Electronics: In applications like battery management systems and electric vehicle powertrains.
Its high voltage rating (600V) and robust performance make it suitable for demanding applications.
1. Switching Power Supplies: Efficient voltage conversion in power supply circuits.
2. Motor Control: For driving DC and AC motors in industrial and consumer applications.
3. Lighting Control: Used in LED drivers and dimmers.
4. Inverters: For solar power systems and uninterruptible power supplies (UPS).
5. Automotive Electronics: In applications like battery management systems and electric vehicle powertrains.
Its high voltage rating (600V) and robust performance make it suitable for demanding applications.
Package
The STD13N60DM2 is typically packaged in a TO-220 form factor, which is a standard package for power transistors. This package provides effective heat dissipation and is suitable for high-power applications.
