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STD3LN80K5
+БОМMOSFET N-CH 800V 2A DPAK
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ПроизводительSTМикроэлектроника
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Мфр. Часть #STD3LN80K5
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Лист данных STD3LN80K5 DataSheet
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Пакет TO-252-3
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В наличии1784
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Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain(Id) @ 25°C | 2A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 3.25Ohm @ 1A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 2.63 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 102 pF @ 100 V |
| Power Dissipation (Max) | 45W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
Обзор
Description
- Voltage Rating: 800V drain-source voltage (VDSS), suitable for power electronics.
- Current Handling: Up to 3A continuous drain current (ID).
- Low On-Resistance: RDS(on) of 3.5Ω (typ.), improving efficiency.
- Fast Switching: Optimized for applications like power supplies, inverters, and motor control.
- Package: TO-252 (DPAK), offering good thermal performance.
It is commonly used in AC-DC converters, LED drivers, and industrial systems requiring reliable high-voltage switching. Always refer to the datasheet for detailed specifications and application guidelines.
Equivalent
- STP3NK80ZFP (STMicroelectronics)
- IRFBE30 (Infineon)
- FQPF3N80C (Fairchild/ON Semi)
- 2SK3562 (Toshiba)
These alternatives offer comparable voltage, current ratings, and package options. Verify datasheets for exact specifications before substitution.
Features
- Voltage Rating: 800V (high-voltage capability)
- Current Rating: 3A (continuous drain current)
- Low On-Resistance (RDS(on)): 3.5Ω (typ.) for reduced conduction losses
- Fast Switching: Optimized for high-speed applications
- Low Gate Charge (Qg): Enhances efficiency in switching circuits
- Avalanche Energy Rated: Improved ruggedness in inductive loads
- Package: TO-252 (DPAK) for efficient thermal performance
- Applications: SMPS, lighting, motor control, and power converters
This MOSFET is designed for high-voltage, low-power switching with efficient thermal management.
Pinout
Pin Functions:
1. Gate (G): Controls the switching operation.
2. Drain (D): Connects to the load (high-voltage side).
3. Source (S): Ground reference (low-voltage side).
Key Features:
- 800V drain-source voltage (VDSS).
- Low on-resistance (RDS(on)) for efficient power handling.
- Commonly used in power supplies, inverters, and motor control.
This MOSFET is packaged in TO-252 (DPAK), a surface-mount design for compact PCB integration.
Manufacturer
The STD3LN80K5 is part of their MDmesh™ K5 series, optimized for high-efficiency power conversion applications.
