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STD4N90K5
+БОМMOSFET N-CH 900V 3A DPAK
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ПроизводительSTМикроэлектроника
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Мфр. Часть #STD4N90K5
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Лист данных STD4N90K5 DataSheet
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В наличии6196
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | MDmesh™ |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 900 V |
| Current-ContinuousDrain(Id)@25°C | 3A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 2.1Ohm @ 1A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 5.3 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 173 pF @ 100 V |
| PowerDissipation(Max) | 60W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
| Package/Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| BaseProductNumber | STD4N90 |
Обзор
Description
Its construction allows it to operate in harsh environments, and it is often used in automotive, industrial, and consumer electronics. The standard package for the STD4N90K5 is usually TO-220, facilitating good thermal management through heat sinks.
When designing circuits that include this MOSFET, it’s essential to consult the datasheet for detailed specifications, including gate threshold voltage, thermal resistance, and safe operating area to ensure reliable performance in specific applications.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 900V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (ID) of 4A, providing robust performance for power management.
3. RDS(on): It offers a low on-resistance (RDS(on)), which minimizes conduction losses and enhances efficiency.
4. Switching Speed: The STD4N90K5 has fast switching capabilities, making it ideal for high-frequency applications.
5. Package Type: It is typically housed in a TO-220 package, allowing for effective heat dissipation.
6. Thermal Performance: Designed for high thermal stability, it can operate in demanding environments.
These characteristics make the STD4N90K5 suitable for applications such as switch-mode power supplies, inverters, and motor drives.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin connects to the load and is where the current flows out of the MOSFET when it is in the 'on' state.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit. Current enters the MOSFET through the source when it is activated.
The STD4N90K5 is commonly used in power switching applications due to its high voltage and current ratings, making it suitable for various electronic circuits.
Manufacturer
STMicroelectronics focuses on innovation in areas such as power management, analog, digital, and microcontroller technologies. The STD4N90K5 itself is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-voltage applications, making it suitable for various electronic circuits, including power supplies and converters. The company is known for its commitment to sustainability and efficiency in the semiconductor industry, contributing to advancements in energy-saving technologies.
Application
1. Switching Power Supplies - Utilized in converters and inverters for efficient energy conversion.
2. Motor Control - Employed in driving DC and brushless motors due to its fast switching capabilities.
3. High-Frequency Applications - Suitable for RF amplifiers and other high-frequency circuits.
4. Lighting Control - Used in LED drivers and dimmers for precise light management.
5. Automotive Electronics - Applied in electric vehicle power management and battery management systems.
Its characteristics make it ideal for applications requiring high efficiency and reliability.